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IRF7413

Description
13 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
Categorysemiconductor    Discrete semiconductor   
File Size2MB,6 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
Download Datasheet Parametric View All

IRF7413 Overview

13 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA

IRF7413 Parametric

Parameter NameAttribute value
Number of terminals8
Minimum breakdown voltage30 V
Processing package descriptionSOP-8
stateDISCONTINUED
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingTIN LEAD
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption2.5 W
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current13 A
Rated avalanche energy260 mJ
Maximum drain on-resistance0.0110 ohm
Maximum leakage current pulse58 A
SMD Type
N-Channel
MOSFET
IRF7413
(KRF7413)
SOP-8
MOSFET
Features
V
DS (V)
= 30V
I
D
= 12 A (V
GS
= 10V)
R
DS(ON)
11mΩ (V
GS
= 10V)
S
S
S
G
D
D
D
D
1.50
0.15
+0.04
0.21
-0.02
1
2
3
4
8
7
6
5
1
2
3
4
Source
Source
Source
Gate
5
6
7
8
Drain
Drain
Drain
Drain
Top View
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *1
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy *3
Avalanche Current *1
Peak Diode Recovery dv/dt
*4
Thermal Resistance.Junction- to-Ambient *2
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range
E
AS
I
AR
dv/dt
R
thJA
R
thJL
T
J
T
stg
*2
TA=25℃
TA=25℃
TA=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Rating
30
±20
12
9.6
96
2.5
0.02
120
7.2
1
50
20
150
-55 to 150
W
W/℃
mJ
A
V/ns
℃/W
A
Unit
V
*1:Repetitive rating; pulse width limited by max. junction temperature.
*2: When mounted on 1 inch square copper board
*3: Starting T
J
= 25°C, L = 4.4mH R
G
= 25Ω, I
AS
= 7.2A.
*4: I
SD
7.2A, di/dt
120A/μs, V
DD
V(BR)
DSS
, T
J
150°C
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