CYStech Electronics Corp.
Spec. No. : C925Q8
Issued Date : 2014.11.12
Revised Date :
Page No. : 1/9
Dual N-Channel Logic Level Enhancement Mode Power MOSFET
MTB20A06Q8
Features
•
Single Drive Requirement
•
Low On-resistance
•
Fast Switching Characteristic
•
Pb-free & halogen-free package
BV
DSS
I
D
@V
GS
=10V, T
A
=25°C
I
D
@V
GS
=10V, T
C
=25°C
R
DS(ON)
@V
GS
=10V, I
D
=6A
R
DS(ON)
@V
GS
=4.5V, I
D
=5A
60V
6A
8.5A
15.4 mΩ(typ)
16.3 mΩ(typ)
Symbol
MTB20A06Q8
Outline
SOP-8
G：Gate D：Drain S：Source
Ordering Information
Device
MTB20A06Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB20A06Q8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
A
=25°C, unless otherwise noted)
Parameter
Symbol
Spec. No. : C925Q8
Issued Date : 2014.11.12
Revised Date :
Page No. : 2/9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 2)
V
DS
V
GS
T
A
=25°C, V
GS
=10V
T
A
=70°C, V
GS
=10V
T
C
=25°C, V
GS
=10V
T
C
=100°C, V
GS
=10V
I
DSM
I
D
I
DM
I
AS
E
AS
P
DSM
P
D
Tj, Tstg
Continuous Drain Current
Pulsed Drain Current
(Note 3)
Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=23A, R
G
=25Ω
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Power Dissipation
T
C
=25°C
T
C
=100°C
60
±20
6.0
4.8
8.5
6.0
50
23
26.5
2
1.6
0.9
3.75
1.88
V
A
mJ
(Note 2)
(Note 2)
(Note 2)
W
Operating Junction and Storage Temperature
-55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, dual operation
Thermal Resistance, Junction-to-ambient, max , single operation
Symbol
R
th,j-c
R
th,j-a
Value
40
62.5
78
(Note 2)
135
(Note 3)
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with T
A
=25
°
C,
t≤10s
.
135°C/W when mounted on a minimum pad of 2 oz. copper.
The power dissipation P
DSM
is based on
R
θJA
and the maximum allowed junction temperature of 150
°
C. The value in any given application depends on the
user’s specific board design.
3. Pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low duty cycles to keep initial T
J
=25°
C.
Characteristics (T
j
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
I
GSS
I
DSS
MTB20A06Q8
Min.
60
1.0
-
-
-
-
Typ.
-
-
16
-
-
-
Max.
-
2.5
-
±
100
1
25
Unit
V
V
S
nA
μA
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=5V, I
D
=6A
V
GS
=
±
20V
V
DS
=48V, V
GS
=0V
V
DS
=48V, V
GS
=0V, Tj=55°C
CYStek Product Specification
CYStech Electronics Corp.
*R
DS(ON)
-
-
15.4
16.3
20
25
m
Ω
V
GS
=10V, I
D
=6A
V
GS
=4.5V, I
D
=5A
Spec. No. : C925Q8
Issued Date : 2014.11.12
Revised Date :
Page No. : 3/9
Dynamic
Qg (V
GS
=10V)
*1, 2
-
40.4
-
Qg (V
GS
=4.5V)
*1, 2
-
20.1
Qgs
*1, 2
-
6.3
-
Qgd
*1, 2
-
7.2
-
Ciss
-
2400
-
Coss
-
107
-
Crss
-
91
-
t
d(ON)
*1, 2
-
14.8
-
tr
-
16.2
-
*1, 2
t
d(OFF)
*1, 2
-
49
-
t
f
*1, 2
-
7.2
-
Rg
-
1.5
-
Source-Drain Diode Ratings and Characteristics
V
SD
*1
-
0.78
1.2
trr
-
15.4
-
Qrr
-
11
-
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
nC
I
D
=6A, V
DS
=48V, V
GS
=10V
pF
V
GS
=0V, V
DS
=25V, f=1MHz
ns
Ω
V
ns
nC
V
DS
=30V, I
D
=6A, V
GS
=10V, R
G
=3.3
Ω
V
GS
=15mV, V
DS
=0V, f=1MHz
I
F
=6A, V
GS
=0V
I
F
=6A, dI
F
/dt=100A/μs
Recommended Soldering Footprint
MTB20A06Q8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
50
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V, 5V, 4V
Spec. No. : C925Q8
Issued Date : 2014.11.12
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
I
D
, Drain Current (A)
40
30
20
V
GS
=3V
10
V
GS
=2.5V
I
D
=250
μ
A,
V
GS
=0V
0
0
1
2
3
4
V
DS
, Drain-Source Voltage(V)
5
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
100
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
90
80
70
60
50
40
30
20
10
0
0.01
0.1
1
10
I
D
, Drain Current(A)
100
V
GS
=2.5V
V
GS
=3.5V
V
GS
=4.5V
V
GS
=10V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
120
I
D
=6A
2.8
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
100
80
60
40
20
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2.4
2
1.6
1.2
0.8
0.4
0
V
GS
=10V, I
D
=6A
R
DS(ON)
@Tj=25°C : 15.4mΩ typ.
V
GS
=4.5V, I
D
=5A
R
DS(ON)
@Tj=25°C : 16.3 mΩ typ.
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTB20A06Q8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
Ciss
Spec. No. : C925Q8
Issued Date : 2014.11.12
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
V
GS(th)
, Normalized Threshold Voltage
1.4
1.2
1
0.8
0.6
0.4
10000
Capacitance---(pF)
1000
C
oss
I
D
=1mA
100
Crss
I
D
=250μA
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
V
DS
=5V
100
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
V
DS
=15V
10
V
GS
, Gate-Source Voltage(V)
8
6
V
DS
=30V
V
DS
=48V
1
V
DS
=30V
4
2
0.1
Ta=25°C
Pulsed
I
D
=6A
0
0.01
0.001
0.01
0.1
1
I
D
, Drain Current(A)
10
100
0
5
10
15 20 25 30 35
Qg, Total Gate Charge(nC)
40
45
Maximum Safe Operating Area
100
Maximum Drain Current vs Junction Temperature
7
I
D
, Maximum Drain Current(A)
R
DSON
Limited
6
5
4
3
2
1
0
T
A
=25°C, V
GS
=10V, R
θ
JA
=78°C/W
I
D
, Drain Current(A)
10
100
μ
s
1ms
1
10ms
100ms
0.1
T
A
=25°C, Tj=150°C
V
GS
=10V, R
θ
JA
=78°C/W
Single Pulse
1s
DC
0.01
0.1
1
10
100
V
DS
, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
MTB20A06Q8
CYStek Product Specification
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