SMD Type
NPN Transistors
2SC3734
SOT-23-3
+0.2
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
3
+0.2
2.8
-0.1
●
High Speed: t
stg
<
200ns
●
Complementary to 2SA1461
+0.2
1.6
-0.1
■
Features
1
2
0.55
0.4
0.95
+0.1
-0.1
+0.1
1.9
-0.2
+0.02
0.15
-0.02
+0.2
1.1
-0.1
1. Base
2. Emitter
+0.1
0.68
-0.1
0-0.1
3. Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
60
40
6
200
200
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain *1
Turn-on time
Storage time
Turn-off time
Collector output capacitance
Transition frequency
*1 : Pulse :PW
≤
350us,Duty Cycle
≤
2℅
Classification of h
fe(1)
Type
Range
Marking
2SC3734-B22
75-150
B22
2SC3734-B23 2SC3734-B24
100-200
B23
150-300
B24
*1
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
h
FE(2)
t
on
t
stg
t
off
C
ob
f
T
V
CB
= 5V, I
E
= 0,f=1MHz
V
CE
= 20V, I
E
= -10mA
300
3
510
V
CC
=3V,I
C
=10mA,I
B1
=-I
B2
=1mA
100
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 30V , I
E
= 0
V
EB
= 5V , I
C
=0
I
C
=50 mA, I
B
=5mA
I
C
=50 mA, I
B
=5mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 100mA
75
25
0.12
0.8
200
80
70
200
250
4
pF
MHz
ns
Min
60
40
6
0.1
0.1
0.3
0.95
300
uA
V
V
Typ
Max
Unit
■
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