SMD Type
NPN Transistors
2SC3838
SOT-23
Transistors
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
+0.1
2.4
-0.1
●
Small rbb’·Cc and high gain.
●
Small NF.
+0.1
1.3
-0.1
●
High transition frequency.
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
■
Features
3
+0.05
0.1
-0.01
0.97
+0.1
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
20
11
3
50
200
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector-base time constant
Noise figure
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
rbb’
．
Cc
NF
C
ob
f
T
h
FE
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA，I
B
=0
I
E
= 100μA， I
C
= 0
V
CB
= 20 V , I
E
= 0
V
EB
= 3V , I
C
=0
I
C
=10 mA, I
B
=5mA
I
C
=10 mA, I
B
=5mA
V
CE
= 10V, I
C
= 5mA
V
CB
= 10 V, I
C
= 10 mA, f=31.8 MHz,
V
CE
= 6 V, I
C
= 2 mA, f=500 MHz,
Rg=50Ω
V
CB
= 10V, I
E
= 0,f=1MHz
V
CE
= 10V, I
C
= 10mA,f=500Mhz
1.4
3.2
82
4
3.5
1.5
Min
20
11
3
0.5
0.5
0.5
1.2
240
12
PS
dB
pF
GHz
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SC3838-P
82-180
ADP
2SC3838-Q
100-200
ADQ
2SC3838-Y
120-240
ADY
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