SMD Type
NPN Transistors
2SC4168-HF
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
+0.1
2.4
-0.1
●
Fast switching speed.
●
High gain-bandwidth product.
●
Low saturation voltage.
●
Complementary to 2SA1607-HF
+0.1
1.3
-0.1
■
Features
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Peak Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
Tstg
Rating
40
20
5
150
300
200
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Delay time
Rise time
Storage time
Fall time
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
t
d
t
r
t
s
t
f
C
ob
f
T
V
CB
= 10V, f=1MHz
V
CE
= 10V, I
C
= 10mA
See specified Test Circuit
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA， R
BE
=
∞
I
E
= 100μA， I
C
= 0
V
CB
= 30 V , I
E
= 0
V
EB
= 4V , I
C
=0
I
C
= 10 mA, I
B
= 1mA
I
C
= 10 mA, I
B
= 1mA
V
CE
= 1V, I
C
= 10mA
60
11
10
70
15
2.6
700
0.08
0.72
Min
40
20
5
0.1
0.1
0.2
1
270
20
20
180
25
pF
MHz
ns
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SC4168-GT3-HF
40-80
GT3
F
2SC4168-GT4-HF
60-120
GT4
F
2SC4168-GT5-HF
160-320
GT5
F
www.kexin.com.cn
1
SMD Type
NPN Transistors
2SC4168-HF
Switching Time Test Circuit
PW=10 s
D.C. 2.5%
Tr. Tf=1ns
INPUT
50
IB1
1k
5k
RB
+
+
470 F
VCC=10V
IB2
OUTPUT
2k
Transistors
VR
100 F
VBE=--5V
5IB1= --5IB2= IC=50mA
For PNP, the polarity is reversed.
■
Typical Characterisitics
100
IC -- VCE
A
1.0m
1.2
mA
160
IC -- VBE
VCE=1V
0.8mA
140
Collector Current, IC –mA
Collector Current, IC –mA
80
0.6mA
120
100
80
60
40
20
60
0.4mA
40
20
0
0
Collector-to-Emitter Voltage, VCE – V
0.4
0.8
1.2
1.6
IB=0
2.0
0
0
0.2
20
IC -- VCE
Base-to-Emitter Voltage, VBE – V
0.4
0.6
Ta=75
C
25 C
--25 C
0.8
0.2mA
1.0
1.2
7
5
3
hFE -- IC
140 A
Collector Current, IC –mA
16
VCE=1V
DC Current Gain, hFE
120
A
100
A
80 A
2
12
100
7
5
3
2
Ta=75 C
25 C
--25 C
8
60
A
40 A
4
20 A
0
IB=0
0
Collector-to-Emitter Voltage, VCE – V
4
8
12
16
20
10
0.1
2 3
5 7 1.0
Collector Current, IC –mA
2 3
5 7 10
2 3
5 7 100
2 3
2
www.kexin.com.cn
SMD Type
NPN Transistors
2SC4168-HF
■
Typical Characterisitics
Collector-to-Emitter Saturation Voltage, VCE(sat) – V
Base to-Emitter Saturation Voltage, VBE (sat) – V
3
2
1.0
7
5
3
2
0.1
7
5
3
2
1.0
2
3
5
7
10
2
3
5
7 100
2
3
Transistors
VCE(sat), VBE(sat) -- IC
IC / IB=10
Output Capacitance, Cob – pF
2
Cob -- VCB
f=1MHz
10
7
5
3
2
VBE(sat)
t)
V CE(sa
1.0
7
5
7
1.0
2
3
5
7
10
2
3
5
7
Collector Current, IC –mA
1000
7
5
3
2
100
7
5
3
2
10
7
5
1.0
SW Time -- IC
Collector-to-Base Voltage, VCB -- V
240
PC -- Ta
Collector Dissipation, PC -- mW
3
Switching Time, SW Time -- ns
VCC=10V
IC=5IB1=--5IB2
200
160
tstg
120
td
tr
tf
80
40
2
3
Collector Current, IC –mA
5
7
10
2
3
5
7 100
2
0
0
20
2
f T -- IC
Ambient Temperature, Ta -- C
40
60
80
100
120
140
160
Gain-Bandwidth Product, fT – MHz
VCE=10V
7
5
3
2
1000
100
7
5
7 1.0
2
3
5
7
10
2
3
5
7 100
2
Collector Current, IC –mA
www.kexin.com.cn
3
京公网安备 11010802033920号
EEWORLD
