SMD Type
NPN Transistors
2SC4432-HF
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
■
Features
+0.1
2.4
-0.1
●
Complementary to 2SA1815-HF
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1
2
0.95
+0.1
-0.1
0.55
●
High cutoff frequency.
+0.1
1.3
-0.1
●
High power gain.
0.4
3
+0.05
0.1
-0.01
+0.1
-0.1
1.9
+0.1
0.97
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
40
18
3
50
250
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Power Gain
Base-to-Collector Time Constant
Reverse Transfer Capacitance
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
PG
r
bb
’C
C
C
re
C
ob
f
T
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 30V , I
E
= 0
V
EB
= 2V , I
C
=0
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
= 10V, I
C
= 5 mA
V
CE
= 10V, I
C
= 10mA,f=100MHz
V
CE
= 10V, I
C
= 5 mA,f=31.9 MHz
V
CB
= 10V,f=1MHz
V
CB
= 10V,f=1MHz
V
CE
= 10V, I
C
= 5mA
0.45
0.7
750
1.2
60
28
23
Min
40
18
3
0.1
0.1
0.2
1.2
270
dB
ps
pF
MHz
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SC4432-RT3-HF
40-80
RT3
F
2SC4432-RT4-HF
60-120
RT4
F
2SC4432-RT5-HF
160-320
RT5
F
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1
SMD Type
NPN Transistors
2SC4432-HF
■
Typical Characterisitics
5
3
2
Transistors
hFE -- IC
VCE=10V
Gain-Bandwidth Product, f T -- MHz
3
2
f T -- IC
VCE=10V
DC Current Gain, hFE
100
7
5
3
2
10
7
5
7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
2
1000
7
5
3
2
100
3
5
Collector Current, IC -- mA
7 1.0
2
3
5
7
7
Cre -- VCB
Collector Current, IC -- mA
10
2
3
5
7 100
Reverse Transfer Capacitance, Cre -- pF
5
3
2
f=1MHz
30
28
PG -- IC
VCE=10V
Power Gain, PG -- dB
26
24
22
20
18
16
1.0
7
5
3
2
0.1
5 7 0.1
2
3
Collector-to-Base Voltage, VCB -- V
5 7 1.0
2
3
5 7 10
2
3
5
3
5
7
1.0
2
3
5
7
Collector Current, IC -- mA
10
2
3
5
7
3
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
1000
7
5
3
2
100
7
5
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
IC / IB=10
300
PC -- Ta
Collector Dissipation, PC -- mW
3
5 7 100
250
200
150
100
50
0
Collector Current, IC -- mA
0
20
Ambient Temperature, Ta --
ϒ
C
40
60
80
100
120
140
160
2
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