MMBT5551-3_15 datasheet, PDF - EEWORLD Datasheet

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MMBT5551-3_15: DescriptionNPN Transistors; File Size1004KB，2 Pages; ManufacturerKEXIN; Websitehttp://www.kexin.com.cn/html/index.htm

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MMBT5551-3_15 Overview

NPN Transistors

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SMD Type

NPN Transistors

MMBT5551

(KMBT5551)

SOT-23-3

+0.2

2.9

-0.1

+0.1

0.4

-0.1

Transistors

Unit: mm

3

+0.2

2.8

-0.1

High Voltage Transistors

Pb-Free Packages are Available

+0.2

1.6

-0.1

Features

1

2

0.55

0.4

0.95

+0.1

-0.1

+0.02

0.15

-0.02

+0.1

-0.2

1.9

+0.2

1.1

-0.1

1. Base

2. Emitter

+0.1

0.68

-0.1

0-0.1

3. Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base v oltage

Collector-emitter v oltage

Emitter-base v oltage

Collector current-continuous

Collector Power Dissipation

Junction and storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

Pc

T

J

, T

stg

Rating

180

160

6

0.6

300

-55 to +150

Unit

V

A

mW

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current gain *

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Transiston frequency

* Pulse Test: Pulse Width = 300

s, Duty Cycle=2.0%.

Symbol

V

CBO

V

CEO

V

EBO

I

CBO

I

EBO

h

FE

I

C

= 100uA, I

I

E

= 10uA, I

Testconditi ons

E

Min

180

160

6

Typ

Max

Unit

V

=0

I

C

= 1.0 mA, I

B

= 0

C

=0

V

CB

= 120 V, I

E

= 0

V

EB

= 4.0 V, I

C

= 0

I

C

= 1.0 mA, V

CE

= 5 V

I

C

= 10 mA, V

CE

= 5 V

I

C

= 50 mA, V

CE

= 5 V

80

100

50

300

0.5

1.0

100

nA

V

CE(sat)

I

C

= 50 mA, I

B

= 5.0 mA

V

BE(sat)

I

C

= 50 mA, I

B

= 5.0 mA

f

T

V

CE

=10V,I

C

=10mA,f=100MHz

V

MHz

■

Classification of h

fe(2)

Type

Range

Marking

MMBT5551

100-300

MMBT5551-L

100-200

G1

MMBT5551-H

200-300

www.kexin.com.cn

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