SMD Type
NPN Transistors
2SD1250
TO-252
+0.15
1.50
-0.15
Transistors
Unit: mm
■
Features
●
High forward current transfer ratio hFE
which has satisfactory linearity
+0.2
9.70
-0.2
+0.15
6.50
-0.15
+0.2
5.30
-0.2
+0.1
2.30
-0.1
0.50
+0.8
-0.7
+0.1
0.80
-0.1
+0.15
0.50
-0.15
●
Complementary to 2SB928
0.127
max
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
●
Low collector to emitter saturation voltage V
CE(sat)
2.3
4 .60
+0.15
-0.15
+
0.60
- 0.1
0.1
1 Base
2 Collector
3 Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Tc = 25℃
Ta = 25℃
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
200
150
6
2
3
30
1.3
150
-55 to 150
A
W
V
Unit
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitte voltage
DC current gain
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE(1)
h
FE(2)
f
T
Test Conditions
Ic= 500
μA，
I
E
= 0
Ic= 5 mA， I
B
= 0
I
E
= 500μA， I
C
= 0
V
CB
= 200 V , I
E
= 0
V
EB
= 5V , I
C
=0
I
C
=500 mA, I
B
=50mA
I
C
= 500 mA, I
B
= 50mA
V
CE
= 10V, I
C
= 400mA
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 400mA
V
CE
= 10V, I
C
= 500mA,f=1MHz
60
50
20
MHz
Min
200
150
6
50
50
1
1.2
1
240
V
uA
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
2SD1250-Q
60-140
2SD1250-P
100-240
3
.8
0
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1
SMD Type
NPN Transistors
2SD1250
■
Typical Characterisitics
P
C
— Ta
50
Transistors
I
C
— V
CE
1.2
T
C
=25˚C
I
B
=7mA
1.2
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
30
(1)
0.8
Collector current I
C
(A)
40
(1) T
C
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
1.0
6mA
5mA
4mA
3mA
1.0
25˚C
T
C
=100˚C
–25˚C
0.8
0.6
0.6
20
0.4
2mA
1mA
0.4
10
(2)
(3)
0
0
20
40
60
80 100 120 140 160
0.2
0.2
0
0
4
8
12
16
20
24
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (
˚C
)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
10
I
C
/I
B
=10
10000
h
FE
— I
C
V
CE
=10V
1000
300
100
30
10
3
1
0.3
0.1
0.01 0.03
f
T
— I
C
V
CE
=10V
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
3
1000
300
100
30
10
3
1
0.01 0.03
T
C
=100˚C
1
T
C
=100˚C
25˚C
0.3
25˚C
–25˚C
–25˚C
0.1
0.03
0.01
0.01
0.03
0.1
0.3
1
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
3000
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
10
3
I
CP
I
C
5ms
1ms
1s
Non repetitive pulse
T
C
=25˚C
10
3
R
th(t)
— t
(1) Without heat sink
(2) With a 50
×
50
×
2mm Al heat sink
(1)
(2)
10
Thermal resistance R
th
(t) (
˚C/W
)
1000
Collector current I
C
(A)
1
0.3
0.1
0.03
0.01
t=0.5ms
10
2
1
0.003
0.001
2SD1250
10
–1
1
3
10
30
100
300
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
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