SMD Type
NPN Transistors
3DD13001
■
Features
●
Collector-emitter Voltage: V
(BR)CEO
=400V
●
Collector Current: I
C
=0.2A
1.70
0.1
Transistors
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
600
400
7
0.2
0.5
150
-55 to 150
Unit
V
V
V
A
W
℃
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base Breakdown voltage
Collector-base cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Fall time
Storage time
Transition frequency
Symbol
Testconditons
Min
600
400
7
100
100
10
5
0.5
1.2
0.7
3
8
V
V
μs
μs
MHz
40
Typ
Max
Unit
V
V
V
μA
μA
V
(BR)CBO
I
C
= 100μA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , I
B
= 0
V
(BR)EBO
I
E
= 100μA , I
C
= 0
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
t
f
t
s
f
T
V
CB
= 600V , I
E
= 0
V
EB
=7V,I
C
=0
V
CE
= 20V , I
C
= 20mA
V
CE
= 10V , I
C
= 0.25mA
I
C
= 50mA, I
B
= 10 mA
I
C
= 50mA, I
B
= 10 mA
I
B1
=-I
B2
=5mA, I
C
=50mA, V
CC
=45V
I
B1
=-I
B2
=5mA, I
C
=50mA, V
CC
=45V
V
CE
= 20 V , I
C
= 20 mA , f = 1 MHz
■
h
FE(1)
Classification
Rank
h
FE
A
B
C
D
E
F
10½15
15½20
20½25
25½30
30½35
35½40
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