SMD Type
PNP Transistors
CXT5401
■
Features
●
Switching and amplification in high voltage
Applications such as telephony
●
Low current(max. 500mA)
●
High voltage(max.160v)
●
Comlementary to CXT5551
0.42 0.1
0.46 0.1
Transistors
(KXT5401)
1.70
0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Rating
-160
-150
-5
-0.5
0.5
250
150
-55 to 150
A
W
℃/W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
Test Conditions
Ic= -100 μA, I
E
=0
Ic= -1 mA, I
B
=0
I
E
= -100μA, I
C
=0
V
CB
= -120 V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-10 mA, I
B
=- 1mA
I
C
=-50 mA, I
B
= -5mA
I
C
= -10 mA, I
B
= -1mA
I
C
= -50 mA, I
B
= -5mA
50
60
50
8
6
100
300
dB
pF
MHz
300
Min
-160
-150
-5
-50
-50
-0.2
-0.5
-1
-1
V
nA
V
Typ
Max
Unit
hfe(1) V
CE
= -5V, I
C
= -1mA
DC current gain
hfe(2) V
CE
= -5V, I
C
= -10mA
hfe(3) V
CE
= -5V, I
C
=-50mA
Noise Figure
Output Capacitance
Transition frequency
NF
C
ob
f
T
V
CE
= -5.0V, I
C
= -200μA,
R
S
= 10Ω,f =10Hz to 15.7KHz
V
CB
=-10V, I
E
= 0,f=1MHz
V
CE
= -10V, I
C
= -10mA,f=100MHz
■
Marking
Marking
5401
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1
SMD Type
PNP Transistors
CXT5401
■
Typical Characterisitics
- 35
Transistors
(KXT5401)
h
FE
—— I
C
T
a
=100 C
o
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
500
V
CE
= -5V
COLLECTOR CURRENT I
C
(mA)
- 25
-180uA
-160uA
-140uA
-120uA
-100uA
-80uA
DC CURRENT GAIN h
FE
- 30
-200uA
100
T
a
=25 C
o
- 20
- 15
- 10
-60uA
-40uA
I
B
=-20uA
10
- 5
0
0
- 2
COLLECTOR-EMITTER VOLTAGE
- 4
-6
- 8
- 10
12
V
CE
- 14
(V)
-
- 16
- 18
4
- 0.3
-1
COLLECTOR CURRENT
- 10
I
C
(mA)
- 100
- 500
- 1.0
V
BEsat
——
I
C
β=10
-1
V
CEsat
——
I
C
β=10
- 0.8
- 0.7
T
a
=25
℃
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
- 0.9
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=100
℃
-0.1
- 0.6
- 0.5
T
a
=100
℃
T
a
=25
℃
- 0.4
- 0.3
-0.1
COLLECTOR CURRENT
-1
-10
I
C
(mA)
-100
-0.01
-0.1
COLLECTOR CURRENT
-1
-10
I
C
(mA)
-100
C
ob
/ C
ib
50
——
V
CB
/
V
EB
TRANSITION FREQUENCY f
T
(MHz)
f=1MHz
I
E
=0 / I
C
=0
T
a
=25 C
o
300
f
T
——
I
C
CAPACITANCE C (pF)
C
ib
250
200
10
150
C
ob
100
50
V
CE
=-10V
T
a
=25 C
-0
-5
-10
-15
-20
-
-25
-30
o
1
- 0.5
-10
0
REVERSE VOLTAGE
V
(V)
COLLECTOR CURRENT
I
C
(mA)
0.6
P
c
——
T
a
COLLECTOR POWER DISSIPATION
P
c
(W)
0.5
0.4
0.3
0.2
0.1
0.0
0
25
AMBIENT TEMPERATURE
50
75
100
T
a
(
℃
)
125
150
2
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