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CXT5401_15

Description
PNP Transistors
File Size1MB,2 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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CXT5401_15 Overview

PNP Transistors

SMD Type
PNP Transistors
CXT5401
Features
Switching and amplification in high voltage
Applications such as telephony
Low current(max. 500mA)
High voltage(max.160v)
Comlementary to CXT5551
0.42 0.1
0.46 0.1
Transistors
(KXT5401)
1.70
0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Rating
-160
-150
-5
-0.5
0.5
250
150
-55 to 150
A
W
℃/W
V
Unit
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
Test Conditions
Ic= -100 μA, I
E
=0
Ic= -1 mA, I
B
=0
I
E
= -100μA, I
C
=0
V
CB
= -120 V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-10 mA, I
B
=- 1mA
I
C
=-50 mA, I
B
= -5mA
I
C
= -10 mA, I
B
= -1mA
I
C
= -50 mA, I
B
= -5mA
50
60
50
8
6
100
300
dB
pF
MHz
300
Min
-160
-150
-5
-50
-50
-0.2
-0.5
-1
-1
V
nA
V
Typ
Max
Unit
hfe(1) V
CE
= -5V, I
C
= -1mA
DC current gain
hfe(2) V
CE
= -5V, I
C
= -10mA
hfe(3) V
CE
= -5V, I
C
=-50mA
Noise Figure
Output Capacitance
Transition frequency
NF
C
ob
f
T
V
CE
= -5.0V, I
C
= -200μA,
R
S
= 10Ω,f =10Hz to 15.7KHz
V
CB
=-10V, I
E
= 0,f=1MHz
V
CE
= -10V, I
C
= -10mA,f=100MHz
Marking
Marking
5401
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