SMD Type
PNP Transistors
BC807A
(KC807A)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
+0.1
2.4
-0.1
High collector current.
High current gain.
Low collector-emitter saturation voltage.
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
For general AF applications.
+0.1
1.3
-0.1
Features
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
●
Complementary NPN type available(BC817A)
0-0.1
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base v oltage
Collector-emitter v oltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Base current
power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Rating
-50
-45
-5
-500
-1
-100
310
150
-65 to +150
Unit
V
V
V
mA
A
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BC807A-16
DC current gain *
Collector saturation voltage *
Base to emitter voltage *
Collector-base capacitance
Emitter-base capacitance
Transition frequency
* Pulsed: PW
350 us, duty cycle
2%
BC807A-25
BC807A-40
V
CE(sat)
I
C
= -500 mA, I
B
= -50 mA
V
BE(sat)
I
C
= -500 mA, I
B
= -50 mA
C
Cb
Ceb
f
T
V
CB
= -10 V, f = 1 MHz
V
EB
= -0.5 V, f = 1 MHz
I
C
= -50 mA, V
CE
= -5 V, f = 100 MHz
10
60
200
h
FE
I
C
= -100 mA, V
CE
= -1 V
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
Testconditions
I
C
= -100 A, I
E
= 0
I
C
= -10 mA, I
B
= 0
I
E
= -100 A, I
C
= 0
V
CB
= -25 V, I
E
= 0
V
CB
= -25 V, I
E
= 0 , T
A
= 150
V
EB
= -4 V, I
C
= 0
100
160
250
160
250
350
Min
-50
-45
-5
-100
-50
-100
250
400
630
-0.7
-1.2
V
V
pF
pF
MHz
Typ
Max
Unit
V
V
V
nA
A
nA
■
Classification of h
fe
Type
Range
Marking
BC807A-16
100-250
5A
BC807A-25
160-400
5B
BC807A-40
250-630
5C
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1
SMD Type
BC807A
■
Typical Characterisitics
h
FE
- I
C
COLLECTOR CURRENT I
C
(mA)
1000
DC CURRENT GAIN h
FE
500
300
Ta=100 C
Ta=25 C
Ta=-25 C
COMMON EMITTER
V
CE
=-1V
Transistors
(KC807A)
I
C
- V
CE
-800
COMMON EMITTER
Ta=25 C
-5
-600
-4
-3
-2
100
50
30
-400
-200
I
B
=-1mA
0
10
-10
-30
-100
-300
-1000
0
0
-1
-2
-3
-4
-5
-6
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
V
CE(sat)
- I
C
-1
-0.3
Ta=100 C
COMMON EMITTER
I
C
/I
B
=25
I
C
- V
BE
COLLECTOR CURRENT I
C
(mA)
-1000
-300
-100
C
C
Ta=
25
-3
COMMON EMITTER
V
CE
=1V
Ta=
-0.1
Ta=25 C
-10
-3
-1
-0.2
-0.03
-0.01
-10
Ta=-25 C
-30
-100
-300
-1000
-0.4
-0.6
-0.8
Ta=
-25
-30
100
C
-1.0
COLLECTOR CURRENT I
C
(mA)
BASE-EMITTER VOLTAGE V
BE
(V)
TRANSITION FREQUENCY
f
T
(MHz)
300
COMMON EMITTER
Ta=25 C
V
CE
=-5V
COLLECTOR POWER DISSIPATION
P
C
(mW)
500
f
T
- I
C
P
C
- Ta
500
400
300
200
100
0
0
25
50
75
100
125
150
175
100
30
10
-1
-3
-10
-30
-100
-300
-1000
COLLECTOR CURRENT I
C
(mA)
AMBIENT TEMPERATURE Ta ( C)
2
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