SMD Type
NPN Transistors
BC817 HF
(KC817 HF)
SOT-23
Transistors
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
●
For general AF applications
2.4
●Complementary
types: BC807 HF ( PNP )
1.3
●
Low collector-emitter saturation voltage
+0.1
-0.1
+0.1
-0.1
1
2
0.95
+0.1
-0.1
0.55
0.4
■
Features
3
0.1
+0.1
-0.1
+0.05
-0.01
1.9
+0.1
0.97
-0.1
1.Base
2.Emitter
0-0.1
+0.1
-0.1
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
50
45
5
0.5
0.3
150
-55 to 150
A
W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE(1)
h
FE(2)
C
ob
f
T
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 10 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 45 V , I
E
= 0
V
EB
= 4V , I
C
=0
I
C
=500 mA, I
B
=50mA
I
C
= 500 mA, I
B
= 50mA
V
CE
= 1V, I
C
= 500mA
V
CE
= 1V, I
C
= 100mA
V
CE
= 1V, I
C
= 500mA
V
CB
= 10V, f=1MHz
V
CE
= 5V, I
C
= 10mA,f=100MHz
100
100
40
10
pF
MHz
Min
50
45
5
0.1
0.1
0.7
1.2
1.2
630
V
uA
V
Typ
Max
Unit
■
Classification of h
fe(1)
Rank
Range
Marking
BC817-16 HF
100-250
6A
F
BC817-25 HF BC817-40 HF
160-400
6B
F
250-630
6C
F
0.38
3.collector
www.kexin.com.cn
1
SMD Type
BC817 HF
(KC817) HF)
BC817
(KC817
■
Typical Characterisitics
280
Transistors
Static Characteristic
1mA
0.9mA
0.8mA
COMMON
EMITTER
T
a
=25
℃
0.7mA
0.6mA
0.5mA
500
h
FE
—— I
C
T
a
=100 C
o
(mA)
240
400
COLLECTOR CURRENT
DC CURRENT GAIN
200
h
FE
300
I
C
160
T
a
=25 C
o
120
0.4mA
0.3mA
0.2mA
200
80
40
I
B
=0.1mA
0
0
2
4
6
8
10
12
14
16
100
1
V
CE
= 1V
10
100
500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1.2
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
β=10
V
CEsat
——
0.4
I
C
β=10
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
1.0
0.3
0.8
T
a
=25
℃
0.2
0.6
T
a
=100
℃
0.4
0.1
T
a
=100
℃
T
a
=25
℃
0.2
0.1
1
10
100
500
0.0
0.1
1
10
100
500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
——
500
V
BE
100
C
ob
/ C
ib
—— V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
T
a
=25 C
C
ib
o
I
C
(mA)
100
50
COLLECTOR CURRENT
10
CAPACITANCE
T
a
=100 C
T
a
=25
℃
o
C
10
1
(pF)
C
ob
V
CE
=1V
0.1
0.3
0.4
BASE-EMITTER VOLTAGE
0.5
0.6
0.7
V
BE
(V)
0.8
0.9
1.0
1
0
REVERSE VOLTAGE
5
V
(V)
10
f
T
300
—— I
C
COLLECTOR POWER DISSIPATION
P
c
(W)
0.4
P
c
——
T
a
(MHz)
0.3
f
T
TRANSITION FREQUENCY
100
0.2
0.1
V
CE
=5V
T
a
=25 C
10
1
o
COLLECTOR CURRENT
10
I
C
60
0.0
(mA)
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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