SMD Type
NPN Transistors
BCP54,BCP55,BCP56
(KCP54,KCP55,KCP56)
SOT-223
6.50±0.2
Transistors
Unit:mm
。
10
3.00±0.1
■
Features
●
For AF driver and output stages
7.0±0.3
4
3.50±0.2
●
High collector current
●
Low collector-emitter saturation voltage
●
Complementary to BCP51,BCP52,BCP53
1
2
3
2.30 (typ)
1.80 (max)
0.250
Gauge Plane
0.02 ~ 0.1
1.Base
2.Collector
0.70±0.1
4.60 (typ)
3.Emitter
4.Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
BCP51
45
45
BCP52
60
60
5
1
1.5
83.3
150
-65 to 150
A
W
℃/W
℃
BCP53
100
80
V
Unit
www.kexin.com.cn
1
SMD Type
NPN Transistors
BCP54,BCP55,BCP56
(KCP54,KCP55,KCP56)
■
Electrical Characteristics Ta = 25℃
Parameter
BCP54
Collector- base breakdown voltage
BCP55
BCP56
BCP54
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
BCP54
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-emitter voltage
DC current gain
Transition frequency
BCP55
BCP56
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE(1)
h
FE(2)
h
FE(3)
f
T
I
CBO
BCP55
BCP56
V
EBO
I
E
= 100μA， I
C
= 0
V
CB
= 45 V , I
E
= 0
V
CB
= 60 V , I
E
= 0
V
CB
= 100 V , I
E
= 0
V
EB
= 5V , I
C
=0
I
C
=500 mA, I
B
=50mA
I
C
=500 mA, I
B
=50mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 5mA
V
CE
= 2V, I
C
= 150mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 10V, I
C
= 50mA,f=100MHz
V
CEO
Ic= 10 mA， I
B
= 0
V
CBO
Ic= 100
μA，
I
E
= 0
Symbol
Test Conditions
Transistors
Min
45
60
100
45
60
80
5
Typ
Max
Unit
V
0.1
0.1
0.5
1.2
1
25
63
25
100
250
uA
V
MHz
■
Classification of h
fe(2)
TypE
Range
BCP54-10,BCP55-10,BCP56-10
63-160
BCP54-16,BCP55-16,BCP56-16
100-250
2
www.kexin.com.cn
SMD Type
NPN Transistors
BCP54,BCP55,BCP56
(KCP54,KCP55,KCP56)
1000
Transistors
■
Typical Characterisitics
250
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
h
FE
——
I
C
COMMON EMITTER
V
CE
=2V
COLLECTOR CURRENT I
C
(mA)
200
1.0mA
0.9mA
150
0.8mA
0.7mA
0.6mA
DC CURRENT GAIN h
FE
300
T
a
=100
℃
T
a
=25
℃
100
100
0.5mA
0.4mA
0.3mA
0.2mA
I
B
=0.1mA
50
30
0
0
1
2
3
4
5
10
1
10
100
1000
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1000
V
CEsat
β=10
——
I
C
1.0
V
BEsat
β=10
——
I
C
COLLECTOR-EMMITTER SATURATION
VOLTAGE V
CEsat
(mV)
300
BASE-EMMITTER SATURATION
VOLTAGE V
BEsat
(V)
0.8
100
T
a
=25
℃
T
a
=100
℃
T
a
=25
℃
0.6
T
a
=100
℃
30
10
1
10
100
1000
0.4
1
10
100
1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
1000
I
C
COMMON EMITTER
V
CE
=2V
——
V
BE
300
C
ob
/ C
ib
——
C
ib
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
COLLECTOR CURRENT I
C
(mA)
100
T
a
=25
℃
100
CAPACITANCE C (pF)
T
a
=100
℃
C
ob
10
10
T
a
=25
℃
1
0.2
0.4
0.6
0.8
1.0
1
0.1
0.3
1
3
10
20
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE BIAS VOLTAGE
V
(V)
300
f
T
——
I
C
1800
P
C
——
T
a
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR POWER DISSIPATION
P
C
(mW)
100
1500
100
1200
900
600
T
a
=25
℃
10
10
30
COMMON EMITTER
V
CE
=10V
300
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
www.kexin.com.cn
3
京公网安备 11010802033920号
EEWORLD
