INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·High
Current Capability
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 100V(Min)
·High
Switching Speed
APPLICATIONS
·Designed
for use in converters, inverters, switching
regulators and switching control amplifiers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CM
I
B
B
BDY90A
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage(V
EB
= 0)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Emitter Current-Continuous
Emitter Current-Peak
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
120
120
100
6
12
15
2
3
-15
-15
40
150
-65~150
UNIT
V
V
V
V
A
A
A
A
A
A
W
℃
℃
I
BM
I
E
I
EM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)
-1
V
CE
(sat)
-2
V
BE
(sat)
-1
V
BE
(sat)
-2
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
Current Gain-Bandwidth Product
CONDITIONS
I
C
=100mA ; I
B
=0
I
C
= 5A; I
B
= 0.5A
B
BDY90A
MIN
100
TYP.
MAX
UNIT
V
0.5
1.0
1.2
1.5
0.1
3.0
0.1
35
30
20
70
120
V
V
V
V
mA
mA
I
C
= 12A; I
B
= 1.2A
I
C
= 5A; I
B
= 0.5A
B
I
C
= 12A; I
B
= 1.2A
V
CE
= V
CEXmax
;V
EB
= 1.5V
V
CE
= V
CEXmax
;V
EB
= 1.5V,T
C
=150℃
V
EB
= 6V; I
C
=0
I
C
= 1A ; V
CE
= 2V
I
C
= 5A ; V
CE
= 5V
I
C
= 12A ; V
CE
= 5V
I
C
= 0.5A ; V
CE
= 5V;f
test
= 5MHz
MHz
Switching Times
t
on
t
s
t
f
Turn-On Time
Storage Time
Fall Time
I
C
= 5A; I
B1
= -I
B2
=0.5A;
V
CC
= 30V
0.35
1.3
0.2
μs
μs
μs
isc Website：www.iscsemi.cn
2
ADI Reference Circuit
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