SMD Type
PNP Transistors
2SA1483
■
Features
●
High transition frequency
●
Low collector output capacitance
●
Complementary to 2SC3803
0.42 0.1
0.46 0.1
1.70
0.1
Transistors
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
Rating
-60
-45
-5
-200
-50
500
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Input impedance (real part)
DC current gain
Turn-on time
Storage time
Fall time
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
R
e(hie)
h
FE
t
on
t
stg
t
f
C
ob
f
T
V
CB
= -10V, I
E
= 0,f=1MHz
V
CE
= -10V, I
C
= -10mA
100
Test Conditions
Ic= -100
μA，
I
E
=0
Ic= -0.5 mA，I
B
= 0
I
E
= -100μA， I
C
=0
V
CB
= -45 V , I
E
=0
V
EB
= -5V , I
C
=0
I
C
=-100 mA, I
B
=-10 mA
I
C
=-100 mA, I
B
=-10 mA
V
CB
= -10V, I
E
=10mA,f=200MHz
V
CE
= -1V, I
C
= -10mA
V
CE
= -3V, I
C
= -200mA
40
20
40
250
30
3.5
200
5
pF
MHz
ns
Min
-60
-45
-5
-0.1
-0.1
-0.3
-1
120
240
uA
V
Ω
V
Typ
Max
Unit
See Test Circuit.
■
Classification of h
fe(1)
Type
Range
Marking
2SA1483-R
40-80
WR*
2SA1483-O
70-140
WO*
2SA1483-Y
120-240
WY*
www.kexin.com.cn
1
SMD Type
PNP Transistors
2SA1483
Switching Time Test Circuit
OUTPUT
500
Ω
200
Ω
INPUT 680
Ω
0
−10
V
1
μs
50
Ω
Transistors
V
BB
=3V
DUTY CYCLE
≤
2%
■
Typical Characterisitics
I
C
– V
CE
−10
V
CC
=
−12
V
1000
h
FE
– I
C
Common emitter
VCE
= −3
V
Ta
=
100°C
25
−55
−5.0
−3.0
−2.0
Ta
=
25°C
DC current gain h
FE
−200
Common emitter
500
300
(mA)
−160
Collector current I
C
100
50
30
−120
−1.5
−1.0
−80
−0.5
−40
IB
= −0.2
mA
10
−0.1
−0.3
−1
−3
−10
−30
−100
Collector current I
C
Collector-emitter saturation voltage
V
CE (sat)
(V)
(mA)
0
0
0
−1
−2
−3
−4
−5
−6
−0.5
−0.3
Common emitter
IC/IB
=
10
−0.1
−0.05
−0.03
V
CE (sat)
– I
C
Collector-emitter voltage
V
CE
(V)
I
C
– V
CE
−200
−8.0
Common emitter
Ta
=
100°C
Ta
=
100°C
25
−55
−0.01
−0.1
−0.3
−1
−3
−10
−30
−100
(mA)
−160
−4.0
−2.0
Collector current I
C
Collector current I
C
(mA)
−120
−1.0
Base-emitter saturation voltage
V
BE (sat)
(V)
−80
−0.6
IB
= −0.2
mA
0
−5
−3
Common emitter
IC/IB
=
10
−1
−0.5
−0.3
V
BE (sat)
– I
C
−40
Ta
= −55°C
25
100
0
0
−1
−2
−3
−4
−5
−6
Collector-emitter voltage
V
CE
(V)
−0.1
−0.1
−0.3
−1
−3
−10
−30
−100
Collector current I
C
(mA)
2
www.kexin.com.cn
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
