SMD Type
PNP Transistors
2SA1579
Transistors
■
Features
●
High breakdown voltage. (BV
CEO
= -120V)
●
Complements the 2SC4102.
1.Base
2.Emitter
3.Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
-120
-120
-5
-50
100
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= -50 μA， I
E
=0
Ic= -1 mA，I
B
=0
I
E
= -50μA， I
C
=0
V
CB
= -100 V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-10 mA, I
B
=-1 mA
I
C
=-10 mA, I
B
=-1 mA
V
CE
= -6V, I
C
= -2mA
V
CB
= -12V,I
E
=0, f=1MHz
V
CE
= -12V, I
C
= -2mA,f=30MHz
180
3.2
140
Min
-120
-120
-5
-0.5
-0.5
-0.5
-1.2
560
pF
MHz
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SA1579-R
180-390
RR
2SA1579-S
270-560
RS
www.kexin.com.cn
1
SMD Type
PNP Transistors
2SA1579
■
Typical Characterisitics
-7
Transistors
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
1000
h
FE
——
I
C
-6
(mA)
-20uA
-18uA
-16uA
h
FE
T
a
=100
℃
-5
I
C
COLLECTOR CURRENT
-4
-14uA
-12uA
-10uA
-8uA
-6uA
-4uA
I
B
=-2uA
-0
-2
-4
-6
-8
-10
-12
DC CURRENT GAIN
T
a
=25
℃
100
-3
-2
-1
COMMON EMITTER
V
CE
= -6V
10
-0.1
-0
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
-1
I
C
(mA)
-10
-50
-1000
V
BEsat
——
β=10
I
C
-1000
V
CEsat
β=10
——
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
-800
T
a
=25
℃
-600
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
-100
T
a
=100
℃
T
a
=100
℃
-400
T
a
=25
℃
-200
-0.1
-1
-10
-50
-10
-0.1
-1
-10
-50
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
-50
I
C
COMMON EMITTER
V
CE
=-6V
——
V
BE
(MHz)
200
f
T
——
I
C
COMMON EMITTER
V
CE
=-12V
(mA)
I
C
T =1
00
℃
a
-1
-0.1
TRANSITION FREQUENCY
COLLECTOR CURRENT
T =2
5
℃
a
f
T
-10
100
T
a
=25
℃
-0
-200
-400
-600
-800
-1000
10
-1
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
-10
-30
(mA)
100
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
150
P
C
——
T
a
T
a
=25
℃
(pF)
C
ib
COLLECTOR POWER DISSIPATION
P
C
(mW)
100
CAPACITANCE
C
10
C
ob
50
1
-0.1
0
-1
-10
-30
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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