SMD Type
PNP Transistors
2SA1734
1.70
0.1
Transistors
■
Features
●
Low saturation voltage
●
High speed switching time
●
Small flat package
●
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
●
Complementary to 2SC4539
1.Base
2.Collector
3.Emitter
0.42 0.1
0.46 0.1
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
BaseCurrent
Collector Power Dissipation
(Note.1)
Junction Temperature
Storage Temperature range
Note.1: Mounted on ceramic board (250mm
2
X 0.8mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
Rating
-40
-30
-6
-1.2
-0.3
0.5
1
150
-55 to 150
A
W
V
Unit
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on Time
Storage time
Fall time
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
h
FE(2)
t
on
t
stg
t
f
C
ob
f
T
V
CB
= -10V, I
E
=0,f=1MHz
V
CE
= -2V, I
C
= -100 mA
See specified Test Circuit
Test Conditions
Ic= -1 mA， I
E
=0
Ic= -10 mA，I
B
= 0
I
E
= -1 mA， I
C
=0
V
CB
= -40 V , I
E
=0
V
EB
= -6V , I
C
=0
I
C
=-700 mA, I
B
=-35 mA
I
C
=-700 mA, I
B
=-35 mA
V
CE
= -2V, I
C
= -100 mA
V
CE
= -2V, I
C
= -1 A
120
40
0.1
0.2
0.1
16
100
pF
MHz
us
Min
-40
-30
-6
-0.1
-0.1
-0.5
-1.2
400
uA
V
V
Typ
Max
Unit
■
Marking
Marking
L*B
www.kexin.com.cn
1
SMD Type
PNP Transistors
2SA1734
Switching Time Test Circuit
I
B2
I
B1
I
B2
OUTPUT
20
Ω
Transistors
INPUT I
B1
20
μs
−I
B1
= I
B2
= 35 mA,
DUTY CYCLE
≤
1%
■
Typical Characterisitics
I
C
– V
CE
−1.0
−10
−8
V
CC
=
−14
V
1000
Common emitter
Ta
=
25°C
300
h
FE
– I
C
Ta
=
100°C
(A)
DC current gain h
FE
−0.8
−6
−4
Collector current I
C
100
25
−25
−0.6
−3
−2
30
−0.4
10
−0.2
IB
= −1
mA
3
0
−2
−4
−6
−8
−10
Common emitter
VCE
= −2
V
0
0
1
−1
−3
−10
−30
−100
−300
−1000 −3000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
−10
V
CE (sat)
– I
C
Common emitter
−100
IC/IB
=
20
V
BE (sat)
– I
C
Common emitter
IC/IB
=
20
Collector-emitter saturation voltage
V
CE (sat)
(V)
Base-emitter saturation voltage
V
BE (sat)
(V)
−3
−30
−1
−10
−0.3
−3
Ta
=
25°C
−25
100
−0.1
Ta
=
100°C
−0.03
25
−25
−3
−10
−30
−100
−300
−1000 −3000
−1
−0.3
−0.01
−1
−0.1
−1
−3
−10
−30
−100
−300
−1000 −3000
Collector current I
C
(mA)
Collector current I
C
(mA)
2
www.kexin.com.cn
SMD Type
PNP Transistors
2SA1734
■
Typical Characterisitics
−1.2
Transistors
I
C
– V
BE
Common emitter
VCE
=
−2
V
Safe Operating Area
−10
−5
−3
IC max (pulse)*
IC max (continuous)
−1.0
*t
=
1 ms
10 ms*
100 ms*
(A)
−0.8
Collector current I
C
(A)
Ta
=
100°C
25
−25
−1
−0.6
Collector current I
C
−0.3
**:
DC operation
40
×
50
×
0.8 t
−0.4
−0.2
−0.1
**:
DC operation
2
250 mm
×
0.8 t
DC operation Ta
=
25°C
Single nonrepetitive pulse
Ta
=
25°C
**:
Mounted on a ceramic substrate.
−0.01
Curves must be derated linearly with
increase in temperature.
−0.005
−0.1
−1
−3
−10
−0.3
−0.03
*:
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Base-emitter voltage
V
BE
(V)
VCEO
max
−30
−100
1.2
P
C
– Ta
(1)
(1) Mounted on a ceramic
2
substrate (250 mm
×
0.8 t)
(2) No heat sink
Collector-emitter voltage V
CE
(V)
P
C
(W)
Collector power dissipation
1.0
0.8
0.6
(2)
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient temperature
Ta
(°C)
www.kexin.com.cn
3
京公网安备 11010802033920号
EEWORLD
