TC1070/TC1071/TC1187
50 mA, 100 mA and 150 mA Adjustable CMOS LDOs with Shutdown
Features:
•
•
•
•
•
•
•
•
50 µA Ground Current for Longer Battery Life
Adjustable Output Voltage
Very Low Dropout Voltage
Choice of 50 mA (TC1070), 100 mA (TC1071)
and 150 mA (TC1187) Output
Power-Saving Shutdown mode
Overcurrent and Overtemperature Protection
Space-Saving 5-Pin SOT-23 Package
Pin Compatible with Bipolar Regulators
Description:
The TC1070, TC1071 and TC1187 devices are
adjustable LDOs designed to supersede a variety of
older (bipolar) voltage regulators. Total supply current
is typically 50 µA at full load (20 to 60 times lower than
in bipolar regulators).
The devices’ key features include ultra low-noise
operation, very low dropout voltage – typically 85 mV
(TC1070), 180 mV (TC1071) and 270 mV (TC1187) at
full load and fast response to step changes in load.
Supply current is reduced to 0.5 µA (maximum) when
the shutdown input is low. The devices incorporate both
overtemperature and overcurrent protection. Output
voltage is programmed with a simple resistor divider
from V
OUT
to ADJ to GND.
The TC1070, TC1071 and TC1187 devices are stable
with an output capacitor of only 1 µF and have a
maximum output current of 50 mA, 100 mA and
150 mA, respectively. For higher output versions
please see the TC1174 (I
OUT
= 300 mA) data sheet
(DS21363).
Applications:
•
•
•
•
•
•
•
Battery Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulators for SMPS
Pagers
Typical Application
V
IN
1
V
IN
V
OUT
5
C1 +
1 µF
R1
V
OUT
Package Type
5-Pin SOT-23
V
OUT
5
TC1070
TC1071
TC1187
R2
TC1070
TC1071
TC1187
2 GND
ADJ
4
3
SHDN
ADJ
4
1
V
IN
2
3
GND SHDN
Shutdown Control
(from Power Control Logic)
R1
V
OUT
= V
REF
------ + 1
-
R2
2010 Microchip Technology Inc.
DS21353E-page 1
TC1070/TC1071/TC1187
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (V
IN
+ 0.3V)
Power Dissipation................Internally Limited
(Note
5)
Maximum Voltage on Any Pin ........V
IN
+0.3V to -0.3V
Operating Temperature Range...... -40°C < T
J
< 125°C
Storage Temperature..........................-65°C to +150°C
ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
V
IN
= V
OUT
+ 1V, I
L
= 0.1 mA, C
L
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C, unless otherwise
noted.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Parameter
Input Operating Voltage
Maximum Output Current
Symbol
V
IN
I
OUTmax
Min
2.7
50
100
150
Adjustable Output
Voltage Range
Reference Voltage
V
REF
Temperature Coefficient
Line Regulation
Load Regulation
(Note
2)
V
OUT
V
REF
V
REF
/T
V
OUT
/V
IN
V
OUT
/V
OUT
V
REF
1.165
—
—
—
—
Note 1:
TC V
OUT
= (V
OUTmax
– V
OUT
MIN
) x 10
6
V
OUT
x
T
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regu-
lation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output
voltage due to heating effects are covered by the thermal regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its
nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipa-
tion is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to
Ilmax at V
IN
= 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction-to-air (i.e., Ta, Tj,
ja).
Exceeding the maxi-
mum allowable power dissipation causes the device to initiate thermal shutdown. Please see
Section 5.0
“Thermal Considerations”
for more details.
The minimum VIN has to justify the conditions: V
IN
V
R
+ V
DROPOUT
and V
IN
2.7V for I
L
= 0.1 mA to
I
OUTMAX
.
Typ
—
—
—
—
—
1.20
40
0.05
0.5
0.5
Max
6.0
—
—
—
5.5
1.235
—
0.35
2
3
V
V
ppm/°C
%
%
Note 1
(V
R
+ 1V)
V
IN
6V
TC1070, TC1071
I
L
= 0.1 mA to I
OUTmax
TC1187
I
L
= 0.1 mA to I
OUTmax
Units
V
mA
Test Conditions
Note 6
TC1070
TC1071
TC1187
2:
3:
4:
5:
6:
DS21353E-page 2
2010 Microchip Technology Inc.
TC1070/TC1071/TC1187
ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
V
IN
= V
OUT
+ 1V, I
L
= 0.1 mA, C
L
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C, unless otherwise
noted.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Parameter
Dropout Voltage
(Note
3)
Symbol
V
IN
-V
OUT
Min
—
—
—
—
—
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Thermal Shutdown
Die Temperature
Thermal Shutdown Hysteresis
Output Noise
SHDN Input
SHDN Input High Threshold
SHDN Input Low Threshold
ADJ Input
Adjust Input Leakage Current
Note 1:
I
ADJ
—
50
—
pA
V
IH
V
IL
45
—
—
—
—
15
%V
IN
%V
IN
V
IN
=
2.5V to 6.5V
V
IN
=
2.5V to 6.5
V
I
IN
I
INSD
PSRR
I
OUTSC
V
OUT
/P
D
T
SD
T
SD
eN
—
—
—
—
—
—
—
—
Typ
2
65
85
180
270
50
0.05
64
300
0.04
160
10
260
Max
—
—
120
250
400
80
0.5
—
450
—
—
—
—
µA
µA
dB
mA
V/W
°C
°C
nV/Hz
I
L
=
I
OUTmax
Units
mV
Test Conditions
I
L
= 0.1 mA
I
L
= 20 mA
I
L
= 50 mA
TC1071, TC1187
I
L
= 100 mA
TC1187
I
L
= 150 mA
SHDN = V
IH
,
I
L
= 0
SHDN =
0V
F
RE
1
kHz
V
OUT
= 0V
Note 4
TC V
OUT
= (V
OUTmax
– V
OUT
MIN
) x 10
6
V
OUT
x
T
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regu-
lation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output
voltage due to heating effects are covered by the thermal regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its
nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipa-
tion is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to
Ilmax at V
IN
= 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction-to-air (i.e., Ta, Tj,
ja).
Exceeding the maxi-
mum allowable power dissipation causes the device to initiate thermal shutdown. Please see
Section 5.0
“Thermal Considerations”
for more details.
The minimum VIN has to justify the conditions: V
IN
V
R
+ V
DROPOUT
and V
IN
2.7V for I
L
= 0.1 mA to
I
OUTMAX
.
2:
3:
4:
5:
6:
TERMPERATURE CHARACTERISTICS
Parameters
Thermal Resistance, 5L-SOT-23
Sym
JA
Min
—
Typ
256
Max
—
Units
°C/W
Conditions
2010 Microchip Technology Inc.
DS21353E-page 3
TC1070/TC1071/TC1187
2.0
Note:
TYPICAL CHARACTERISTICS
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise specified, all parts are measured at temperature = +25°C.
Dropout Voltage vs. Temperature
(V
OUT
= 3.3V)
I
LOAD
= 10mA
DROPOUT VOLTAGE (V)
0.020
0.018
0.100
0.090
0.080
0.070
0.060
0.050
0.040
0.030
0.020
0.010
0.000
Dropout Voltage vs. Temperature
(V
OUT
= 3.3V)
I
LOAD
= 50mA
DROPOUT VOLTAGE (V)
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
-40
-20
0
20
50
TEMPERATURE (°C)
70
125
C
IN
= 1μF
C
OUT
= 1μF
C
IN
= 1μF
C
OUT
= 1μF
-40
-20
0
20
50
TEMPERATURE (°C)
70
125
0.020
0.018
Dropout Voltage vs. Temperature
(V
OUT
= 3.3V)
I
LOAD
= 10mA
DROPOUT VOLTAGE (V)
0.300
0.250
0.200
0.150
0.100
0.050
0.000
Dropout Voltage vs. Temperature
(V
OUT
= 3.3V)
I
LOAD
= 150mA
DROPOUT VOLTAGE (V)
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
-40
-20
0
20
50
TEMPERATURE (°C)
70
125
C
IN
= 1μF
C
OUT
= 1μF
C
IN
= 1μF
C
OUT
= 1μF
-40
-20
0
20
50
TEMPERATURE (°C)
70
125
90
80
Ground Current vs. V
IN
(V
OUT
= 3.3V)
I
LOAD
= 10mA
GND CURRENT (
μ
A)
90
80
70
60
50
40
30
20
10
0
Ground Current vs. V
IN
(V
OUT
= 3.3V)
I
LOAD
= 100mA
GND CURRENT (
μ
A)
70
60
50
40
30
20
10
0
C
IN
= 1μF
C
OUT
= 1μF
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
C
IN
= 1μF
C
OUT
= 1μF
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
DS21353E-page 4
2010 Microchip Technology Inc.
TC1070/TC1071/TC1187
Note:
Unless otherwise specified, all parts are measured at temperature = +25°C.
80
70
GND CURRENT (μA)
Ground Current vs. V
IN
(V
OUT
= 3.3V)
I
LOAD
= 150mA
3.5
V
OUT
vs.
V
IN
(V
OUT
= 3.3V)
I
LOAD
= 0
3
2.5
60
V
OUT
(V)
50
40
30
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
2
1.5
1
C
IN
= 1μF
C
OUT
= 1μF
0.5
0
0
0.5 1 1.5
2 2.5 3 3.5
4 4.5 5
C
IN
= 1μF
C
OUT
= 1μF
5.5 6 6.5 7
V
IN
(V)
3.5
3.0
2.5
V
OUT
(V)
V
OUT
vs.
V
IN
(V
OUT
= 3.3V)
3.320
3.315
3.310
3.305
Output Voltage vs. Temperature
(V
OUT
= 3.3V)
I
LOAD
= 10mA
I
LOAD
= 100mA
2.0
1.5
1.0
0.5
0.0
0
V
OUT
(V)
3.300
3.295
3.290
3.285
C
IN
= 1μF
C
OUT
= 1μF
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
IN
(V)
3.280
3.275
-40
C
IN
= 1μF
C
OUT
= 1μF
V
IN
= 4.3V
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
3.290
3.288
3.286
Output Voltage vs. Temperature
(V
OUT
= 3.3V)
I
LOAD
= 150mA
V
OUT
(V)
3.284
3.282
3.280
3.278
3.276
3.274
-40
-20
-10
0
20
40
85
125
C
IN
= 1μF
C
OUT
= 1μF
V
IN
= 4.3V
TEMPERATURE (°C)
2010 Microchip Technology Inc.
DS21353E-page 5
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