SMD Type
PNP Transistors
TIP42 Series
(KIP42 Series)
TO-252
+0.15
1.50
-0.15
Transistors
Unit: mm
■
Features
●
Medium Power Linear Switching Applications
●
Complement to TIP41/41A/41B/41C
+0.2
9.70
-0.2
+0.15
6.50
-0.15
+0.2
5.30
-0.2
+0.1
2.30
-0.1
0.50
+0.8
-0.7
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
2.3
4 .60
+0.15
-0.15
+
0.60
- 0.1
0.1
1 Base
2 Collector
3 Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Base Current
Collector Power Dissipation Tc=25°C
Ta=25°C
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
stg
TIP42
-40
-40
TIP42A TIP42B TIP42C
-60
-60
-5
-6
-10
2
20
2
150
-65 to 150
W
A
-80
-80
-100
-100
V
Unit
℃
3
.8
0
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SMD Type
PNP Transistors
TIP42 Series
(KIP42 Series)
■
Electrical Characteristics Ta = 25℃
Parameter
Symbol
TIP42
Collector- base breakdown voltage
V
CBO
TIP42A
TIP42B
TIP42C
TIP42
Collector-emitter sustaining voltage
V
CEO(SUS)
TIP42A
TIP42B
TIP42C
Emitter - base breakdown voltage
V
EBO
TIP42
Collector-base cut-off current
I
CBO
TIP42A
TIP42B
TIP42C
Collector- emittercut-off current
I
CEO
TIP42/42A
TIP42B/42C
TIP42
Collector- emittercut-off current
I
CES
TIP42A
TIP42B
TIP42C
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
h
FE(2)
f
T
I
E
= -100μA， I
C
=0
V
CB
= -40 V , I
E
=0
V
CB
= -60 V , I
E
=0
V
CB
= -80 V , I
E
=0
V
CB
= -100 V , I
E
=0
V
CE
= -30 V , I
E
=0
V
CE
= -60 V , I
E
=0
V
CE
= -40 V , I
E
=0
V
CE
= -60 V , I
E
=0
V
CE
= -80 V , I
E
=0
V
CE
= -100 V , I
E
=0
V
EB
= -5V , I
C
=0
I
C
=-6 A, I
B
=-600mA
V
CE
= -4V, I
C
= -6 A
V
CE
= -4V, I
C
= -300 mA
V
CE
= -4V, I
C
= -3 A
V
CE
= -10V, I
C
= -500mA
Ic= -30 mA， I
B
=0
Ic= -100
μA，
I
E
=0
Test Conditions
Transistors
Min
-40
-60
-80
-100
-40
-60
-80
-100
-5
Typ
Max
Unit
V
-0.1
uA
-0.7
mA
-400
uA
-1
-1.5
-2
30
15
3
75
mA
V
MHz
2
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SMD Type
PNP Transistors
TIP42 Series
(KIP42 Series)
■
Typical Characterisitics
1000
Transistors
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-2.0
V
CE
= -4V
I
C
/I
B
= 10
-1.6
h
FE
, DC CURRENT GAIN
100
V
BE
(sat)
-1.2
-0.8
10
V
CE
(sat)
-0.4
1
- 0 .0 1
- 0 .1
-1
- 10
-0.0
-0.01
-0.1
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
25
-100
I
C
[A], COLLECTOR CURRENT
-10
I
C
(MAX) (PULSE)
P
C
[W], POWER DISSIPATION
20
0.5
ms
15
s
1m
I
C
(MAX) (DC)
s
5m
10
-1
TIP42
TIP42A
TIP42B
-0.1
5
TIP42C
-1
-1 0
-1 0 0
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 3. Safe Operating Area
Figure 4. Power derating
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