SMD Type
PNP Transistors
2SA1162
SOT-23-3
+0.2
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
3
+0.2
2.8
-0.1
●
High voltage and high current
●
High h
FE
: h
FE
= 70~400
●
Low noise: NF = 1dB (typ.), 10dB (max)
●
Complementary to 2SC2712
+0.2
1.6
-0.1
■
Features
1
2
0.55
0.4
0.95
+0.1
-0.1
+0.02
0.15
-0.02
+0.1
-0.2
1.9
+0.2
1.1
-0.1
1. Base
2. Emitter
+0.1
0.68
-0.1
0-0.1
3. Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
Rating
-50
-50
-5
-150
-30
150
125
-55 to 125
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Noise figure
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
NF
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -50 V , I
E
=0
V
EB
= -5V , I
C
=0
I
C
=-100 mA, I
B
=-10mA
I
C
=-100 mA, I
B
=-10mA
V
CE
= -6V, I
C
= -2mA
V
CE
= −6 V, IC = −0.1 mA, f = 1 kHz,
R
g
= 10 kΩ,
V
CB
= -10V, I
E
= 0,f=1MHz
V
CE
= -10V, I
C
= -1mA
80
70
Min
-50
-50
-5
-100
-100
-0.3
-1.2
400
10
7
dB
pF
MHz
nA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SA1162-O
70-140
SO
2SA1162-Y
120-240
SY
2SA1162-G
200-400
SG
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