SMD Type
PNP Transistors
2SA1235
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
+0.1
2.4
-0.1
Features
Small collector to emitter saturation voltage.
Excelent lineary DC forward current gain.
Super mini package for easy mounting.
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
-0.1
1.9
0.97
+0.1
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation (Ta=25
Jumction temperature
Storage temperature
)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-50
-50
-6
-200
200
125
-55 to +125
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC forward current gain
Noise figure
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
NF
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
I
C
= -1 mA， I
B
=0
I
E
= -100μA，I
C
=0
V
CB
= -50 V , I
E
=0
V
EB
= -6V , I
C
=0
I
C
=-100 mA, I
B
=-10mA
I
C
=-100 mA, I
B
=-10mA
V
CE
= -6V, I
C
= -1mA
V
CE
= -6V, I
C
= -0.1mA
V
CB
= -6V, I
E
= 0.3mA,f=100 Hz,R
G
=10kΩ
V
CB
= -6V, I
E
= 0,f=1MHz
V
CE
= -6V, I
E
= -10mA
4
200
150
90
20
dB
pF
MHz
Min
-50
-50
-6
-0.1
-0.1
-0.3
-1.2
800
uA
V
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
Marking
2SA1235-E
150-300
ME
2SA1235-F
250-500
MF
2SA1235-G
400-800
MG
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1
SMD Type
PNP Transistors
2SA1235
■
Typical Characterisitics
COMMON EMITTER OUTPUT
-50
0.18mA
0.16mA
COLLECTOR CURRENT IC(mA)
-40
-50
Transistors
COMMON EMITTER TRANSFER
Ta=25℃
0.14mA
0.12mA
COLLECTOR CURRENT IC(mA)
-40
Ta=25℃
VCE=-6V
-30
0.10mA
0.08mA
-30
-20
0.06mA
0.04mA
-20
-10
0.02mA
IB=0
-10
-0
-0
-1
-2
-3
-4
-5
COLLECTOR EMITTER VOLTAGE VCE(V)
-0
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
BASE TO EMITTER VOLTAGE VBE(V)
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
10000
Ta=25℃
VCE=-6V
100(@IC=-1mA)
1000
250
Ta=25℃
VCE=-6V
GAIN BAND WIDTH PRODUCT fT(MHz)
200
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
RELATIVE VALUE OF DC FORWARD CURRENT
GAIN hFE
150
100
100
10
50
1
-0.1
-1
-10
-100
COLLECTOR CURRENT IC(mA)
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
COLLECTOR OUTPUT CAPACITANCE Cob(pF)
Ta=25℃
IE=0
f=1MHz
250
COLLECTOR DISSIPATION Pc (mW)
0
-1000
0.1
1
10
EMITTER CURRENT IE(mA)
100
COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE
200
10
150
100
1
50
0
0
25
0.1
-0.1
-1
-10
COLLECTOR TO BASE VOLTAGE VCB(V)
-100
50
75
100
AMBIENT TEMPERTURE Ta (℃
)
125
150
2
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