SMD Type
PNP Transistors
2SA1368
Transistors
Features
High Voltage V
CEO
= -100V
High Collector Current (I
CM
= -800mA)
High Collector Dissipation P
C
= 500mW
Small Package For Mounting
Complementary to 2SC3438
0.42 0.1
1.70
0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Collector Power Dissipation
Jumction temperature
Storage temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Rating
-100
-100
-5
-500
-800
500
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector Output Capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA，R
BE
=∞
I
E
= -100μA， I
C
=0
V
CB
= -50 V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-150mA, I
B
=- 15mA
I
C
=-150mA, I
B
=- 15mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
E
= 0,f=1MHz
V
CE
= -10V, I
E
= 10mA
55
11
130
-0.15
Min
-100
-100
-5
-0.1
-0.1
-0.5
-1.2
300
pF
MHz
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SA1368-C
55-110
EC
2SA1368-D
90-180
ED
2SA1368-E
150-300
EE
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