SMD Type
PNP Transistors
2SA1946
Transistors
■
Features
●
Low collector saturation voltage
●
High f
T
,f
T
=180MHz(typ)
●
High collector current I
CM
=-1A
●
Small package for mounting
●
Complements to 2SC5212
0.42 0.1
1.70
0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Colletor Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
J
T
stg
Rating
-25
-20
-4
-0.7
-1
0.5
150
-55 to 150
A
W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA，R
BE
=
∞
I
E
= -100μA， I
C
=0
V
CB
= -25 V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-500mA, I
B
=-25mA
I
C
=-500mA, I
B
=-25mA
V
CE
= -4V, I
C
= -100mA
V
CE
= -6V, I
E
= 10mA
150
180
-0.25
Min
-25
-20
-4
-1
-1
-0.5
-1.2
800
MHz
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SA1946-E
150-300
AAE
2SA1946-F
250-500
AAF
2SA1946-G
400-800
AAG
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