SMD Type
PNP Transistors
2SA2018
SOT-523
+0.
1
1.6
-0.1
+0.1
1.0
-0.1
+0.05
0.2
-0.05
Transistors
U n it: m m
0.15±0.05
0.55 (REF.)
■
Features
●
A collector current is large.
●
Low V
CE(sat)
.
V
CE(sat)
≤-250mV
at I
C
= -200mA / I
B
= -10mA
2
1
1.
-0.15
6
+0.15
3
0.3±0.05
+0.1
0.5
-0.1
0.
36±0.1
1. Base
0.
-0.05
75
+0.05
0.
-0.11
8
+0.
2. Emitter
3. Collecter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
-15
-12
-6
-500
-1
150
150
-55 to 150
mA
A
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA，I
B
= 0
I
E
= -100μA， I
C
=0
V
CB
= -15V , I
E
=0
V
EB
= -6V , I
C
=0
I
C
=-200mA, I
B
=-10mA
I
C
=-200mA, I
B
=-10mA
V
CE
= -2V, I
C
= -10mA
V
CB
= -10V, I
E
= 0,f=1MHz
V
CE
= -2V, I
C
= -10mA,f=100MHz
270
6.5
260
Min
-15
-12
-6
-0.1
-0.1
-0.25
-1.2
680
pF
MHz
uA
V
V
Typ
Max
Unit
■
Marking
Marking
BW
0.
8±0.1
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1
SMD Type
PNP Transistors
2SA2018
■
Typical Characterisitics
1000
V
CE
=2V
Transistors
200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
500
200
100
50
20
10
5
2
1
0
0.5
1.0
Ta=125°
C
Ta=25°
C
Ta=
−40°
C
180
160
140
120
100
80
60
40
20
0
I
B
=700µA
1000
I
B
=600µA
500
V
CE
=2V
DC CURRENT GAIN : h
FE
I
B
=500µA
I
B
=400µA
I
B
=300µA
I
B
=200µA
200
100
50
20
10
5
2
1
1
2
5
10 20
50 100 200
500 1000
Ta=125°
C
Ta=25°
C
Ta=
−40°
C
I
B
=100µA
I
B
=0µA
C
Ta=25
°
pulsed
1.5
BASE TO EMITTER VOLTAGE : V
BE
(V)
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Grounded Emitter Propagation
Characteristics
1000
500
I
C
/ I
B
=20
Fig.2 Typical Output Characteristics
BASER SATURATION VOLTAGE : V
BE (sat)
(mV)
1000
500
Ta=25°
C
Fig.3 DC Current Gain vs.
Collector Current
10000
5000
2000
1000
500
200
100
50
20
10
1
2
5
10 20
50 100 200
500 1000
Ta=
−40°
C
Ta=25°
C
Ta=125°
C
I
C
/ I
B
=20
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(mV)
200
100
50
20
10
5
2
1
1
2
5
10 20
50 100 200
500 1000
Ta=125°
C
Ta=25°
C
Ta=
−40°
C
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(mV)
200
100
50
20
10
5
2
1
1
2
5
10 20
50 100 200
500 1000
I
C
/ I
B
=50
I
C
/ I
B
=20
I
C
/ I
B
=10
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current
(
1
)
EMITTER INPUT CAPACITANCE :
Cib (pF)
COLLECTOR OUTPUT CAPACITANCE :
Cob (pF)
1000
Fig.5 Collector-Emitter Saturation
Voltage vs.
Collector Current
(
2)
1000
500
200
100
50
20
10
5
2
1
0.1 0.2
0.5
1
2
5
10 20
50 100
Cib
Fig.6 Base-Emitter Saturation
Voltage vs.Collecter Current
TRANSITION FREQUENCY : f
T
(MHz)
500
200
100
50
20
10
5
2
1
1
2
5
10 20
V
CE
=2V
Ta=25°
C
I
E
=0A
f=1MHz
Ta=25°
C
Cob
50 100 200
500 1000
EMITTER CURRENT : I
C
(mA)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Gain Bandwidth Product vs.
Emitter Current
Fig.8 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
2
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