SMD Type
NPN Transistors
2SD596-HF
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
■
Features
+0.1
2.4
-0.1
●
Complimentary to 2SB624-HF
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.1
1.3
-0.1
●
High DC Current gain.
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
30
25
5
700
200
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
(Note.1)
(Note.1)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE(1)
h
FE(2)
C
ob
f
T
Test Conditions
Ic= 100 μA, I
E
= 0
Ic= 1 mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 30 V , I
E
= 0
V
EB
= 5V , I
C
=0
I
C
=700 mA, I
B
=70mA
I
C
=700 mA, I
B
=70mA
V
CE
= 6V, I
C
= 10mA
V
CE
= 1V, I
C
= 100mA
V
CE
= 1V, I
C
= 700mA
V
CB
= 6V, I
E
= 10mA , f=10MHz
V
CE
= 6V, I
C
= 10mA
170
0.6
110
50
12
pF
MHz
Min
30
25
5
100
100
0.6
1.2
0.7
400
V
nA
V
Typ
Max
Unit
(Note.1)
(Note.1)
Note.1: Pulse test : Pulse width
≤350μs,Duty
Cycle≤2%.
■
Classification of h
fe(1)
Type
Range
Marking
2SD596-DV1-HF
110-180
DV1
F
2SD596-DV2-HF
135-220
DV2
F
2SD596-DV3-HF
170-270
DV3
F
2SD596-DV4-HF
200-320
DV4
F
2SD596-DV5-HF
250-400
DV5
F
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1
SMD Type
NPN Transistors
■
Typical Characterisitics
180
160
Transistors
2SD596-HF
600
Static Characteristic
500uA
450uA
400uA
COMMON
EMITTER
T
a
=25
℃
h
FE
h
FE
—— I
C
COMMON EMITTER
V
CE
= 1V
550
500
450
400
350
300
250
200
150
100
50
2.5
1
10
(mA)
140
120
100
80
60
40
20
0
0.0
T
a
=100 C
o
I
C
COLLECTOR CURRENT
350uA
300uA
250uA
200uA
150uA
100uA
I
B
=50uA
0.5
1.0
1.5
2.0
DC CURRENT GAIN
T
a
=25 C
o
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
100
(mA)
700
1.2
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
β=10
350
V
CEsat
——
β=10
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
1.0
300
250
0.8
T
a
=25
℃
200
0.6
150
0.4
T
a
=100
℃
100
T
a
=100
℃
T
a
=25
℃
1
10
100
700
0.2
50
0.0
0.1
1
10
100
700
0
0.1
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
300
f
T
COMMON EMITTER
V
CE
=6V
——
I
C
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
(MHz)
250
f
T
TRANSITION FREQUENCY
150
CAPACITANCE
C
200
(pF)
T
a
=25 C
o
100
T
a
=25 C
C
ib
o
10
100
C
ob
50
0
1
COLLECTOR CURRENT
10
I
C
(mA)
100
1
0.1
REVERSE VOLTAGE
1
V
(V)
10
20
I
C
—— V
BE
700
250
P
c
——
T
a
COLLECTOR POWER DISSIPATION
P
c
(mW)
0.8
0.9
1.0
I
C
(mA)
100
200
COLLECTOR CURRENT
T
a
=100 C
10
o
150
T
a
=25
℃
1
100
50
COMMON EMITTER
V
CE
=6V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0
25
50
75
100
125
150
BASE-EMITTER VOLTAGE
V
BE
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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