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2SD596-DV3-HF

Description
NPN Transistors
File Size1MB,2 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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2SD596-DV3-HF Overview

NPN Transistors

SMD Type
NPN Transistors
2SD596-HF
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
Features
+0.1
2.4
-0.1
Complimentary to 2SB624-HF
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.1
1.3
-0.1
High DC Current gain.
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
30
25
5
700
200
150
-55 to 150
mA
mW
V
Unit
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
(Note.1)
(Note.1)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE(1)
h
FE(2)
C
ob
f
T
Test Conditions
Ic= 100 μA, I
E
= 0
Ic= 1 mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 30 V , I
E
= 0
V
EB
= 5V , I
C
=0
I
C
=700 mA, I
B
=70mA
I
C
=700 mA, I
B
=70mA
V
CE
= 6V, I
C
= 10mA
V
CE
= 1V, I
C
= 100mA
V
CE
= 1V, I
C
= 700mA
V
CB
= 6V, I
E
= 10mA , f=10MHz
V
CE
= 6V, I
C
= 10mA
170
0.6
110
50
12
pF
MHz
Min
30
25
5
100
100
0.6
1.2
0.7
400
V
nA
V
Typ
Max
Unit
(Note.1)
(Note.1)
Note.1: Pulse test : Pulse width
≤350μs,Duty
Cycle≤2%.
Classification of h
fe(1)
Type
Range
Marking
2SD596-DV1-HF
110-180
DV1
F
2SD596-DV2-HF
135-220
DV2
F
2SD596-DV3-HF
170-270
DV3
F
2SD596-DV4-HF
200-320
DV4
F
2SD596-DV5-HF
250-400
DV5
F
www.kexin.com.cn
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