SMD Type
PNP Transistors
BC807W
(KC807W)
Transistors
■
Features
●
Ldeally suited for automatic insertion
●
Epitaxial planar die construction
●
Complementary to BC817W
1.Base
2.Emitter
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Rating
-50
-45
-5
-0.5
0.2
625
150
-55 to 150
A
W
℃/W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
h
FE(2)
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -10 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -50 V , I
E
=0
V
CE
= -20 V , I
E
=0
V
EB
= -5V , I
C
=0
I
C
=-500 mA, I
B
=-50mA
I
C
= -500 mA, I
B
=- 50mA
V
CE
= -1V, I
C
= -100mA
V
CE
=- 1V, I
C
= -500mA
V
CB
= -10V,f=1MHz
V
CE
= -5V, I
C
= -10mA,f=100MHz
80
100
40
10
pF
MHz
Min
-50
-45
-5
-0.1
-0.2
-0.1
-0.7
-1.2
600
V
uA
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
Marking
BC807W-16
100-250
5A
BC807W-25
160-400
5B
BC807W-40
250-600
5C
www.kexin.com.cn
1
SMD Type
PNP Transistors
BC807W
■
Typical Characterisitics
-160
-140
Transistors
(KC807W)
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
1000
h
FE
T
a
=100
℃
—— I
C
COLLECTOR CURRENT I
C
(mA)
-120
-100
-80
-60
-40
-20
-0
-0.0
-360uA
-320uA
-280uA
-240uA
-200uA
-160uA
-120uA
-80uA
I
B
= -40uA
-0.5
-1.0
-1.5
-2.0
-2.5
DC CURRENT GAIN h
FE
-400uA
T
a
=25
℃
100
10
-0.1
COMMON EMITTER
V
CE
= -1V
-1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
-10
I
C
(mA)
-100
-500
-1000
V
CEsat
—— I
C
-1200
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
-900
T
a
=25
℃
-600
-100
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
-10
β=10
-0.3
-1
-10
-100
-500
-300
-0.1
β=10
-1
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
-10
I
C
(mA)
-100
-500
-500
I
C
—— V
BE
500
f
T
—— I
C
-100
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
-1
T =2
5
℃
a
-10
T=
a
10
0
℃
100
-0.1
COMMON EMITTER
V
CE
= -1V
-0
BESE-EMMITER VOLTAGE V
BE
(mV)
-300
-600
-900
-1200
10
T
a
=25
℃
-1
COMMON EMITTER
V
CE
=-5V
-100
COLLECTOR CURRENT
-10
I
C
(mA)
100
C
ob
/C
ib
—— V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
250
P
C
——
a
T
CAPACITANCE C (pF)
C
ib
T
a
=25
℃
COLLECTOR POWER DISSIPATION
P
C
(mW)
-20
200
150
10
C
ob
100
50
1
-0.1
REVERSE VOLTAGE
-1
V
(V)
-10
0
0
25
AMBIENT TEMPERATURE
50
75
100
T
a
(
℃
)
125
150
2
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