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MSAD200-18

Description
200 A, 1800 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size143KB,3 Pages
ManufacturerETC2
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200 A, 1800 V, SILICON, RECTIFIER DIODE

MSCD200
Glass Passivated Rectifier
Diode Modules
V
RRM
800 to 1800V
I
FAV
200 Amp
Applications
Non-controllable rectifiers for AC/AC
converters
Line rectifiers for transistorized AC motor
controllers
Field supply for DC motors
Circuit
Features
Blocking voltage:800 to 1800V
Heat transfer through aluminum oxide ceramic
isolated metal baseplate
Glass passivated chip
UL E243882 approved
Module Type
TYPE
MSCD200-08
MSCD200-12
MSCD200-16
MSCD200-18
MSAD200-08
MSAD200-12
MSAD200-16
MSAD200-18
MSKD200-08
MSKD200-12
MSKD200-16
MSKD200-18
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
Conditions
Single phase ,half wave 180°conduction Tc=95℃
I
FAV
Single phase ,half wave 180°conduction Tc=102℃
I
F(RMS)
t=10mS Tvj =45℃
I
FSM
2
t=10mS Tvj =45℃
it
a.c.50HZ;r.m.s.;1min
V
isol
T
vj
T
stg
Mt
Ms
Weight
To terminals(M6)
To heatsink(M6)
Values
200
240
6800
231200
3000
-40 to 150
-40 to 125
5±15%
5±15%
160
Units
A
A
A
A
2
s
V
Nm
Nm
g
Module (Approximately)
Thermal Characteristics
Symbol
Per diode
R
th(j-c)
Module
R
th(c-s)
Electrical Characteristics
Symbol
V
FM
I
RD
T=25℃ I
F
=300A
Conditions
Values
0.18
0.05
Units
℃/W
℃/W
Conditions
T
vj
=150℃ V
RD
=V
RRM
1
Values
Min.
Typ.
1.18
Max.
1.30
9
Units
V
mA
Document Number: MSCD200
Aug.31, 2010
www.
smsemi.com

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