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MSHV40N

Description
Glass Passivated High Voltage Diodes
File Size137KB,2 Pages
ManufacturerETC2
Download Datasheet View All

MSHV40N Overview

Glass Passivated High Voltage Diodes

MSHV40N
Case:DO- 41
Glass Passivated
High Voltage Diodes
Reverse Voltage
4000V
Forward current
10
mA
Features
Plastic package
Glass passivated die construction
High Reverse Voltage
Low cost
Plastic material has UL flammability
recognition 94V-0
Polyimide coating on die stack
Application
Car ignition systems
Automotive applications with extreme
temperature requirements
Mechanical Data
Case:
Molded plastic case
Terminals:
Plated leads solderable per
MIL-STD-750, Method 2026
Polarity:
Marked on Body
Mounting Position:
Any
Weight:
0.33g(Approximately)
Dimensions Inches and (mm)
Maximum Ratings and Electrical Characteristics
@ T
A
= 25
O
C unless otherwise specified
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
Conditions
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum average forward current
Half sine-wave f=60H
Z
T
A
= 25℃
Peak forward surge current
single half sine-wave 8.3ms,f=60H
Z
Instantaneous Forward Voltage at 10mA DC
Reverse leakage current V
R
=V
RRM
T
A
=25℃
Reverse leakage current V
R
=V
RRM
T
A
=175℃
Operating Junction
Storage temperature range
Reverse recovery time
I
F
=0.5A,I
R
=1A,I
RR
=0.25A
Non repetitive reverse energy
I
(BR)R
=80mA, inductive load
MIN.
4000
2800
4000
10
25
3.0
-
30
-65
-65
800
15
400
Values
TYP.
-
-
-
-
-
-
-
250
-
-
-
-
-
MAX.
6500
-
-
100
30
3.8
1.0
300
+175
+175
-
-
550
Unit
V
V
V
mA
A
V
uA
uA
ns
mJ
N/mm
2
V
F
I
R
I
R
Tj
T
STG
trr
E
R
Lead tensile
strength
Document Number: MSHV40N
Apr.01, 2012
www.smsemi.com
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