SAC5.0 thru SAC75
Transient Voltage Suppressor
Breakdown Voltage 5.0 to 75 Volts
Peak Pulse Power
500 Watts
Features
CASE: DO-204AL (DO-41)
Breakdown Voltages (V
BR
) from 5.0 to 75V
500W peak pulse power capability with a 10/1000μs
waveform, repetitive rate (duty cycle):0.01%
Low incremental surge resistance
Fast Response Time
Excellent clamping capability
High temperature soldering guaranteed: 265
℃
/10
seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)
tension
Application
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
@
Symbol
P
PPM
I
PPM
V
F
T
J,
T
STG
Conditions
Peak pulse power capability with a 10/1000μs
Peak pulse current with a 10/1000μs
印
打
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on IC
S
, MOSFE, signal lines of sensor units for
consumer, computer, industrial, automotive and
telecommunication
Mechanical Data
Case:
Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
Terminals:
Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
Marking:
Part number and cathode band
Polarity:
Cathode indicated by band
Weight:
0.3g（Approximately）
25 C unless otherwise specified
O
效
无
Value
500
SEE TABLE1
2.5
3.5
-65 to +150
Unit
W
A
W
V
℃
P
M(AV)
Steady state power dissipation at T
L
=75℃ ,Lead lengths 0.375”(10mm)
Maximum instantaneous forward voltage at 30A
Operating and Storage Temperature
Document Number: SAC5.0 thru SAC75
Feb.29, 2012
www.smsemi.com
1
SAC5.0 thru SAC75
Electrical Characteristics @ 25°C (Unless Otherwise Noted) TABLE1
Reverse
Stand
Off
Voltage
(Note1)
V
WM
(V)
Breakdown
Voltage
V
BR
@ I
BR
1.0mA
V
BR
(V)
Maximum
Standby
current
I
D
@ V
WM
I
D
(µA)
Maximum
Peak
Pulse
Current
I
PP
(A)
Maximum
Clamping
Voltage
V
C
@
I
PP
=5.0A
(Note2)
V
C
(V)
Maximum
Capacitance
@ 0 Volts
pF
C (pF)
Working
Inverse
Blocking
Voltage
V
WIB
(V)
Inverse
Blocking
Leakage
Current
@ V
WIB
I
IB
(μA)
Peak
Inverse
Blocking
Voltage
V
PIB
(V)
Microsemi
Part
Number
SAC5.0
SAC6.0
SAC7.0
SAC8.0
SAC8.5
SAC10
SAC12
SAC15
SAC18
SAC22
SAC26
SAC36
SAC45
SAC50
SAC75
5.0
6.0
7.0
8.0
7.5
10.0
12.0
15.0
18.0
22.0
26.0
36.0
45.0
50.0
75.0
7.60
7.90
8.33
8.89
9.44
11.1
13.3
16.7
20.0
24.4
28.9
40.0
50.0
55.5
83.3
300
300
300
100
50
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
44.0
41.0
38.0
36.0
34.0
29.0
25.0
20.0
15.0
14.0
11.1
8.6
6.8
5.8
4.1
10.0
11.2
12.6
13.4
14.0
16.3
19.0
23.6
28.8
35.4
42.3
60.0
77.0
88.0
121.0
Note1:
A transient voltage suppressor is normally selected according to voltage (V
WM
), which should be equal to or
greater than the dc or continuous peak operating voltage level.
Note2:
Test in TVS avalanche direction. Do not pulse in “forward” direction. See section for “Schematic Applications” herein.
Characteristic Curve
100
10
1.0
0.1
印
打
1.0
I
PP
0.5
Impulse
Exponential
Decay
t
W
I
PP
150
I
PP
- Peak Pulse Current - % I
PP
P
PP
- Peak Pulse Power (kW)
效
无
t
r
=10µs
Peak Value I
PP
Half Value I
PP
2
10/1000µs Waveform
as defined by R.E.A.
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
75
75
75
75
75
75
75
75
75
75
75
75
150
150
150
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
100
100
100
100
100
100
100
100
100
100
100
100
200
200
200
t
W
Half Sine
t
W
=0.71
p
t
p
Square
Wave
100
t
W
Current Waveforms
50
0.1
1.0
10
10
2
t
w
-Pulse Width (
µs)
10
3
10
4
0
0
1.0
t-Time (ms)
2.0
3.0
Fig. 1 Peak Pulse Power vs. Pulse Time
Fig.2 Pulse Waveform for Exponential Surge
Document Number: SAC5.0 thru SAC75
Feb.29, 2012
www.smsemi.com
2
SAC5.0 thru SAC75
100
P
PP
-Peak Pulse Power or continuous
Average Power in Percent of 25
℃
(%)
Peak Pulse Power
(Single Pulse).
75
50
Average
Power
25
0
0
50
100
150
Lead or Ambient Temperature (℃)
200
Fig.3 Derating Curve
Schematic Applications
The TVS low capacitance device configuration is shown in Fig.4. As a further option for unidirectional applications, an
additional low capacitance rectifier diode may be used in parallel in the sane polarity direction as the TVS as shown in
Fig.5. In applications where random high voltage transients occur, this will prevent reverse transients from damaging
the internal low capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier
diode should be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping
voltage V
C.
If using two (2) low capacitance TVS devices in also provided. The unidirectional and bidirectional
configurations in Fig.5 and 6 will both in twice the capacitance of Fig.4
Fig.4 TVS with internal
Low Capacitance Diode
印
打
TVS
DIODE
效
无
+
OUT
IN
+
Fig.6 Optional Bidirectional
configuration (two TVS and
devices in anti-parallel)
www.smsemi.com
Fig.5 Optional Unidirectional
configuration (TVS and
separate rectifier diode
in parallel)
Document Number: SAC5.0 thru SAC75
Feb.29, 2012
3
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