BPW14N
Silicon NPN Phototransistor
Description
BPW14N is a high speed silicon NPN epitaxial planar
phototransistor in a standard TO–18 hermetically sealed
metal case.
Its glass lens, featuring a viewing angle of
±12
°
makes it
insensible to ambient straylight. A base terminal is avail-
able to enable biasing and sensitivity control.
Features
D
D
D
D
D
D
D
D
D
Hermetically sealed case
Lens window
Narrow viewing angle
ϕ
=
±
10
°
Exact central chip alignment
Base terminal available
High photo sensitivity
Fast response times
Suitable for visible and near infrared radiation
Selected into sensitivity groups
94 8486
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
R
thJC
Value
32
32
5
50
100
310
150
–55...+150
260
400
150
Unit
V
V
V
mA
mA
mW
°
C
°
C
°
C
K/W
K/W
t
p
/T = 0.5, t
p
10 ms
T
amb
25
°
C
x
x
t
x
5s
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
1 (6)
BPW14N
Basic Characteristics
T
amb
= 25
_
C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Collector Base Capacitance
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
Cut–Off Frequency
Test Conditions
I
C
= 1 mA
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E=0
V
CB
= 5 V, f = 1 MHz, E=0
Symbol
V
(BR)CEO
I
CEO
C
CEO
C
CBO
ϕ
Min
32
Typ
Max
Unit
V
nA
pF
pF
deg
nm
nm
V
I
C
= 1 mA, I
B
= 100
m
A
V
S
=5V, I
C
=5mA, R
L
=100
W
V
S
=5V, I
C
=5mA, R
L
=100
W
V
S
=5V, I
C
=5mA, R
L
=100
W
l
p
l
0.5
t
on
t
off
f
c
1
5.7
6.5
±10
780
520...950
100
V
CEsat
3.2
2.7
170
0.3
m
s
m
s
kHz
Type Dedicated Characteristics
T
amb
= 25
_
C
Parameter
Collector Light Current
g
Test Conditions
E
e
=1mW/cm
2
,
l
=950nm, V
CE
=5V
Type
BPW14NB
BPW14NC
Symbol
I
ca
I
ca
Min
1.0
1.7
Typ
1.5
3.0
Max
2.0
Unit
mA
mA
2 (6)
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
BPW14N
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
800
P
tot
– Total Power Dissipation ( mW )
I
ca
– Collector Light Current ( mA )
10
BPW 14 NC
1
BPW 14 NB
600
R
thJC
400
0.1
200
R
thJA
0
0
25
50
75
100
125
150
V
CE
=5V
l
=950nm
0.01
0.01
94 8339
0.1
1
10
94 8329
T
amb
– Ambient Temperature (
°C
)
E
e
– Irradiance ( mW / cm
2
)
Figure 1. Total Power Dissipation vs. Ambient Temperature
10
6
I
CEO
– Collector Dark Current ( nA )
I
ca
– Collector Light Current ( mA )
10
5
10
4
10
3
10
2
10
1
10
0
20
94 8330
Figure 4. Collector Light Current vs. Irradiance
10
BPW 14 NB
l
=950nm
V
CE
=20V
E
e
=1 mW/cm
2
1
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.1
50
100
150
94 8340
0.1
1
10
100
T
amb
– Ambient Temperature (
°C
)
V
CE
– Collector Emitter Voltage ( V )
Figure 2. Collector Dark Current vs. Ambient Temperature
3.5
I
ca rel
– Relative Collector Current
3.0
2.5
2.0
1.5
1.0
0.5
0
0
94 8331
Figure 5. Collector Light Current vs. Collector Emitter Voltage
C
CEO
– Collector Emitter Capacitance ( pF )
20
16
f=1MHz
12
V
CE
=5V
E
e
=1mW/cm
2
l
=950nm
8
4
0
0.1
1
10
100
V
CE
– Collector Emitter Voltage ( V )
50
100
150
94 8335
T
amb
– Ambient Temperature (
°C
)
Figure 3. Relative Collector Current vs. Ambient Temperature
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
3 (6)
BPW14N
t
on
/ t
off
– Turn on / Turn off Time (
m
s )
8
S
rel
– Relative Sensitivity
V
CE
=5V
R
L
=100
W
l
=950nm
0°
10
°
20
°
30°
6
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
4
t
on
2
t
off
0
0
2
4
6
8
10
12
14
0.6
94 8351
0.4
0.2
0
0.2
0.4
0.6
94 8336
I
C
– Collector Current ( mA )
Figure 7. Turn On/Turn Off Time vs. Collector Current
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
S (
l
)
rel
– Relative Spectral Sensitivity
1.0
0.8
0.6
0.4
0.2
0
400
600
94 8337
l
– Wavelength ( nm )
800
1000
Figure 8. Relative Spectral Sensitivity vs. Wavelength
4 (6)
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
BPW14N
Dimensions in mm
96 12180
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
5 (6)
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