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MMBD7000

Description
0.2 A, 100 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size342KB,2 Pages
ManufacturerGSME Electronics
WebsiteHttp://www.gsme.com.cn
Download Datasheet Parametric View All

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MMBD7000 Overview

0.2 A, 100 V, SILICON, SIGNAL DIODE

MMBD7000 Parametric

Parameter NameAttribute value
Number of terminals3
Processing package descriptionSOT-23, 3 PIN
stateCONSULT MFR
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.0040 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current0.2000 A
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
MMBD7000
SWITCHING DIODE
開關二極管
FEATURES
特點
Characteristic
特性參數
Power dissipation
耗散功率
Forward Current
正向電流
Reverse Voltage
反向電壓
Junction and Storage Temperature
結溫和儲藏溫度
DEVICE
Symbol
符號
P
D
(Ta=25
)
I
F
V
R
T
J
,
T
stg
Max
最大值
225
200
100
Unit
單½
mW
mA
V
-55to+150
MARKING
打標
MMBD7000=M5C
MMBD7000=
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=
25
unless otherwise noted
如無特殊说明,溫度爲
25℃
)
Characteristic
特性參數
Reverse Breakdown Voltage
反向擊穿電壓
(I
R
=100uA)
Reverse Leakage Current
反向漏電流
(V
R
=50V)
(V
R
=100V)
Forward Voltage(Test Condition)正向電壓
I
F
=1mA
I
F
=10mA
I
F
=100mA
Diode Capacitance
二極體電容
(V
R
=0V, f=1MHz)
Reverse Recovery Time
反向恢復時間
SOT-23
内部结构
Symbol
符號
V
(BR)
I
R
Min
最小值
100
Max
最大值
1
3
700
820
1100
1.5
4
Unit
單½
V
uA
V
F
550
670
750
mV
C
D
Trr
pF
nS
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