Plastic-Encapsulate Transistors
FEATURES
•
Large collector power dissipation PC
•
Complementary to 2SD874
2SB766
(PNP)
Maximum Ratings (
Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
Tstg
Value
-30
-25
-5
-1
0.5
150
-55to +150
Unit
V
V
V
1. BASE
A
W
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS
( @ Ta=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(sat)
f
T
C
ob
unless otherwise specified)
Test
I
C
=-10μA, I
E
=0
I
C
=-2mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CB
=-20V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-10V, I
C
=-500mA
V
CE
=-5V, I
C
=-1A
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-10V, I
C
=-50mA, f=200MHz
V
CB
=-10V, I
E
=0, f=1MHz
85
50
-0.2
-0.85
200
20
30
-0.4
-1.2
V
V
MHz
pF
conditions
Min
-30
-25
-5
-0.1
-0.1
340
Typ
Max
Unit
V
V
V
μA
μA
CLASSIFICATION OF h
FE
Rank
Range
Marking
Q
85-170
AQ
R
120-240
AR
S
170-340
AS
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P1
Plastic-Encapsulate Transistors
2SB766
Typical Characteristics
Page:P2-P2
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
京公网安备 11010802033920号
EEWORLD
