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3.0SMCJ12A

Description
3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size486KB,7 Pages
ManufacturerBWTECH
Websitehttp://www.bruckewell-semi.com
Download Datasheet View All

3.0SMCJ12A Overview

3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB

3.0SMCJ_5.0_220A
Stand-off Voltage : 5.0 to 220V
Peak Pulse Power : 3000 W
Features
3000W peak pulse power capability with a 10/1000μs
waveform
Excellent clamping capability
Low inductance
High temperature soldering : 250 °C/10 seconds at
terminals.
Built-in strain relief
RoHS compliant package
Mechanical Data
Case : SMC Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead formed for Surface mount
Mounting position : Any
Weight : 0.229 gram
Applications
For Bi-directional use C or CA Suffix
Electrical characteristics apply in both directions
Packing & Order Information
3,000/Reel
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified
Symbol
Parameter
P
PPM
I
PPM
I
FSM
TJ,Tstg
Notes :
(1) Non-repetitive Current pulse, per Fig. 3 and derated above Ta = 25 °C per Fig. 1
(2) Mounted on 5.0 mm2 (0.013 thick) land areas.
(3) Measured on 8.3 ms , single half sine-wave or equivalent square wave, duty cycle=4 pulses per minutes
maximum.
Publication Order Number: [3.0SMCJ_5.0_220A]
Value
3000
See Next Table
200
-55 to +150
Unit
W
A
A
°C
Peak Pulse Power Dissipation on 10/1000ms waveform
Peak Pulse Current on 10/1000ms waveform
(1)
(1)(2)
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load
(2)(3)
Operating Junction and Storage Temperature Range
©
Bruckewell Technology Corporation Rev. A -2014
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