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HER301

Description
3 A, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size65KB,2 Pages
ManufacturerGoodwork Semiconductor ( GW )
Websitehttp://www.goodwork.com.tw/
Download Datasheet Parametric Compare View All

HER301 Overview

3 A, SILICON, RECTIFIER DIODE, DO-201AD

HER301 Parametric

Parameter NameAttribute value
MakerGoodwork Semiconductor ( GW )
Reach Compliance Codeunknow
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current150 A
Number of components1
Maximum operating temperature150 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.05 µs
surface mountNO
Base Number Matches1
HER301
THRU
HER308
3.0 AMP HIGH EFFICIENCY RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* High speed switching
3.0 Amperes
DO-27
.220(5.6)
.197(5.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
.375(9.5)
.285(7.2)
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=55 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 3.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
HER301 HER302 HER303 HER304 HER305 HER306 HER307 HER308
UNITS
V
V
V
A
A
V
A
A
nS
pF
C
50
35
50
100
70
100
200
140
200
300
210
300
3.0
150
1.3
5.0
100
400
280
400
600
420
600
800
560
800
1000
700
1000
1.0
1.85
50
75
-65 +150
75
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
142

HER301 Related Products

HER301 HER302 HER303 HER304 HER305 HER306 HER307 HER308
Description 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
Maker Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW )
Reach Compliance Code unknow unknown unknow unknow unknow unknown unknow unknow
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1.3 V 1.3 V 1.85 V 1.85 V 1.85 V
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A 150 A 150 A 150 A
Number of components 1 1 1 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Maximum repetitive peak reverse voltage 50 V 100 V 200 V 300 V 400 V 600 V 800 V 1000 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.07 µs 0.07 µs 0.07 µs
surface mount NO NO NO NO NO NO NO NO
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