204-1N400X datasheet, PDF - EEWORLD Datasheet

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204-1N400X: Description1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41; Categorysemiconductor Discrete semiconductor; File Size60KB，2 Pages; ManufacturerETC2

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204-1N400X Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

204-1N400X Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	PLASTIC PACKAGE-2
state	ACTIVE
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
Terminal location	AXIAL
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	Signal diode
Maximum repetitive peak reverse voltage	1000 V
Maximum average forward current	1 A

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1N4001

1.0 AMP SILICON RECTIFIERS

THRU

1N4007

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

FEATURES

* Low forward voltage drop

* High current capability

* High reliability

* High surge current capability

1.0 Ampere

DO-41

.107(2.7)

.080(2.0)

DIA.

1.0(25.4)

MIN.

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-0 rate flame retardant

* Lead: Axial leads, solderable per MIL-STD-202,

method 208 guranteed

* Polarity: Color band denotes cathode end

* Mounting position: Any

.034(.9)

.028(.7)

DIA.

.205(5.2)

.166(4.2)

1.0(25.4)

MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Ta=75 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 1.0A

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Ta=100 C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance R JA (Note 2)

Operating and Storage Temperature Range T

, T

STG

NOTES:

1N4001

1N4002 1N4003 1N4004

1N4005 1N4006 1N4007

UNITS

100

200

140

200

400

280

400

1.0

5.0

-65

+150

600

420

600

800

560

800

1000

700

1000

C/W

1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.

204

204-1N400X Related Products

	204-1N400X	1N4007	1N4001
Description	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE
Number of terminals	2	2	2
Number of components	1	1	1
Processing package description	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	MINIATURE PACKAGE-2
state	ACTIVE	ACTIVE	ACTIVE
packaging shape	round	round	round
Package Size	LONG FORM	LONG FORM	LONG FORM
Terminal form	Wire	Wire	Wire
Terminal location	AXIAL	AXIAL	AXIAL
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	UNSPECIFIED
structure	single	single	single
Shell connection	isolation	isolation	isolation
Diode component materials	silicon	silicon	silicon
Diode type	Signal diode	Signal diode	Signal diode
Maximum average forward current	1 A	1 A	1 A
Maximum repetitive peak reverse voltage	1000 V	1000 V	-

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