l
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
l
Low Switching Losses
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount
Techniques
V
DSS
30V
R
DS(on)
max
HEXFET
®
Power MOSFET
IRF6604
Qg
17nC
PD - 94365E
11.5mΩ@V
GS
= 7.0V
13mΩ@V
GS
= 4.5V
MQ
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)
SQ
SX
ST
MQ
MX
MT
DirectFET ISOMETRIC
Description
The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging
to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly
equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed
regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize
thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6604 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6604 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 7.0V
Continuous Drain Current, V
GS
@ 7.0V
Continuous Drain Current, V
GS
@ 7.0V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
±12
49
12
9.2
92
2.3
1.5
42
0.018
-40 to + 150
Units
V
A
g
g
c
W
W/°C
°C
Thermal Resistance
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
fj
gj
hj
ij
Typ.
–––
12.5
20
–––
1.0
Max.
55
–––
–––
3.0
–––
Units
°C/W
www.irf.com
Notes
through
are on page 11
1
11/16/05
IRF6604
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Min. Typ. Max. Units
30
–––
–––
–––
1.3
–––
–––
–––
–––
–––
–––
38
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
27
9.0
10
–––
-4.5
–––
–––
–––
–––
–––
–––
17
4.1
1.0
6.3
5.6
7.3
9.5
1.1
11
4.3
18
25
2270
420
190
Conditions
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
–––
V V
GS
= 0V, I
D
= 250µA
––– mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 7.0V, I
D
= 12A
11.5
13
V
GS
= 4.5V, I
D
= 9.6A
2.1
V V
DS
= V
GS
, I
D
= 250µA
––– mV/°C
30
µA V
DS
= 24V, V
GS
= 0V
50
µA V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
100
100
nA V
GS
= 12V
-100
V
GS
= -12V
–––
S V
DS
= 15V, I
D
= 9.6A
26
–––
V
DS
= 15V
–––
nC V
GS
= 4.5V
–––
I
D
= 9.6A
–––
See Fig. 16
–––
–––
nC V
DS
= 16V, V
GS
= 0V
2.0
Ω
–––
V
DD
= 15V, V
GS
= 4.5V
–––
I
D
= 9.6A
–––
ns Clamped Inductive Load
–––
–––
V
GS
= 0V
–––
pF V
DS
= 15V
ƒ = 1.0MHz
–––
e
e
Ãe
Avalanche Characteristics
E
AS
I
AR
E
AR
Ã
d
Typ.
–––
–––
–––
Max.
32
9.6
0.23
Units
mJ
A
mJ
–––
–––
–––
–––
–––
–––
–––
0.94
31
26
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
42
A
92
1.2
47
39
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 9.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.6A
di/dt = 100A/µs
e
e
2
www.irf.com
IRF6604
1000
VGS
TOP
10V
7.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
2.7V
10
2.7V
10
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1
0.1
1
20µs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.00
2.0
I
D
= 12A
ID, Drain-to-Source Current
(Α
)
T J = 150°C
1.5
R
DS(on)
, Drain-to-Source On Resistance
T J = 25°C
10.00
(Normalized)
1.0
0.5
1.00
2.5
3.0
VDS = 15V
20µs PULSE WIDTH
3.5
4.0
0.0
-60
-40
-20
0
20
40
60
80
100
V
GS
= 7.0V
120
140
160
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF6604
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
6.0
ID= 9.6A
VGS , Gate-to-Source Voltage (V)
5.0
4.0
3.0
2.0
1.0
0.0
0
5
C, Capacitance(pF)
Ciss
VDS= 24V
VDS= 15V
1000
Coss
Crss
100
1
10
100
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
10
ID, Drain-to-Source Current (A)
100
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0
1
10
10msec
1
T
J
= 25
°
C
0.1
0.0
0.5
1.0
V
GS
= 0 V
1.5
2.0
0.1
V
SD
,Source-to-Drain Voltage (V)
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF6604
12
2.0
VGS(th) Gate threshold Voltage (V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
9
I
D
, Drain Current (A)
ID = 250µA
6
3
0
25
50
75
100
125
150
T
A
, Ambient Temperature (°C)
°
-75
-50
-25
0
25
50
75
100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
(Z
thJA
)
D = 0.50
10
0.20
0.10
Thermal Response
0.05
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.1
0.00001
0.0001
0.001
0.01
0.1
t
1
/ t
2
+T
A
10
100
J
= P
DM
x Z
thJA
0.02
1
0.01
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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