BGD712C
750 MHz, 18.5 dB gain power doubler amplifier
Rev. 02 — 16 August 2007
Product data sheet
1. Product profile
1.1 General description
Hybrid high dynamic range amplifier module in SOT115J package operating at a supply
voltage of 24 V (DC).
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
I
I
I
I
I
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
1.3 Applications
I
CATV systems operating in the 40 MHz to 750 MHz frequency range.
1.4 Quick reference data
Table 1:
Symbol
G
p
I
tot
[1]
Quick reference data
Parameter
power gain
total current
Conditions
f = 45 MHz
f = 750 MHz
V
B
= 24 V
[1]
Min
18.2
19
380
Typ
-
-
-
Max
18.8
20
410
Unit
dB
dB
mA
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
NXP Semiconductors
BGD712C
750 MHz, 18.5 dB gain power doubler amplifier
2. Pinning information
Table 2:
Pin
1
2
3
5
7
8
9
Pinning
Description
input
common
common
+V
B
common
common
output
1 3 5 7 9
1
5
9
Simplified outline
Symbol
2 3 7 8
sym095
3. Ordering information
Table 3:
Ordering information
Package
Name
BGD712C
-
Description
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2
×
6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
Version
SOT115J
Type number
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
B
V
i
T
stg
T
mb
Parameter
supply voltage
input voltage
storage temperature
mounting base temperature
Conditions
Min
-
-
−40
−20
Max
30
70
+100
+100
Unit
V
dBmV
°C
°C
BGD712C_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 August 2007
2 of 7
NXP Semiconductors
BGD712C
750 MHz, 18.5 dB gain power doubler amplifier
5. Characteristics
Table 5:
Characteristics
Bandwidth 40 MHz to 750 MHz; V
B
= 24 V; T
mb
= 35
°
C; Z
S
= Z
L
= 75
Ω
.
Symbol
G
p
SL
FL
Parameter
power gain
slope cable equivalent
flatness of frequency response
Conditions
f = 45 MHz
f = 750 MHz
f = 45 MHz to 750 MHz
f = 45 MHz to 100 MHz
f = 100 MHz to 700 MHz
f = 700 MHz to 750 MHz
S
11
S
22
ϕ
s21
CTB
input return losses
output return losses
phase response
composite triple beat
f = 45 MHz to 790 MHz
f = 45 MHz to 790 MHz
f = 50 MHz
112 channels flat;
V
o
= 44 dBmV;
measured at 745.25 MHz
60 channels flat;
V
o
= 44 dBmV
measured at 745.25 MHz
79 channels flat;
V
o
= 44 dBmV
measured at 547.25 MHz
CSO
composite second-order
distortion
112 channels flat;
V
o
= 44 dBmV;
measured at 746.5 MHz
60 channels flat;
V
o
= 44 dBmV
measured at 746.5 MHz
79 channels flat;
V
o
= 44 dBmV
measured at 548.5 MHz
NF
I
tot
[1]
Min
18.2
19.0
0.5
-
-
-
17
17
135
-
Typ
-
-
-
-
-
-
-
-
-
-
Max
18.8
20.0
1.5
±0.35
±0.5
±0.15
-
-
225
−62
Unit
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
-
−67
-
dB
-
-
−68
dB
-
-
−63
dB
-
−70
-
dB
-
-
−68
dB
noise figure
total current
f = 50 MHz
f = 750 MHz
[1]
-
-
380
-
-
-
7
7
410
dB
dB
mA
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
BGD712C_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 August 2007
3 of 7
NXP Semiconductors
BGD712C
750 MHz, 18.5 dB gain power doubler amplifier
6. Package outline
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A2
1
A
L
F
S
W
d
U2
B
y
M
B
p
Q
e
e1
q2
q1
y
M
B
x
M
B
b
w
M
2
3
5
7
8
9
c
U1
q
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
9.1
b
c
d
D
E
max. max. max.
e
e1
F
L
min.
p
Q
max.
q
q1
q2
S
U1
U2
W
w
x
y
0.1
Z
max.
3.8
mm 20.8
4.15
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
3.85
0.38
2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7
44.25 7.8 UNC
OUTLINE
VERSION
SOT115J
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-02-06
04-02-04
Fig 1. Package outline SOT115J
BGD712C_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 August 2007
4 of 7
NXP Semiconductors
BGD712C
750 MHz, 18.5 dB gain power doubler amplifier
7. Revision history
Table 6:
Revision history
Release date
20070816
Data sheet status
Product data sheet
Change notice
-
Supersedes
BGD712C_1
Document ID
BGD712C_2
Modifications:
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Changed descriptive title
Product data sheet
-
-
BGD712C_1
20060502
BGD712C_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 August 2007
5 of 7
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