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IRF6612PBF

Description
RoHs Compliant
CategoryDiscrete semiconductor    The transistor   
File Size238KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRF6612PBF Overview

RoHs Compliant

IRF6612PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionROHS COMPLIANT, ISOMETRIC-3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)37 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)136 A
Maximum drain current (ID)24 A
Maximum drain-source on-resistance0.0033 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XBCC-N3
JESD-609 codee4
Humidity sensitivity level3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.8 W
Maximum pulsed drain current (IDM)190 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceSilver/Nickel (Ag/Ni)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 97215
DirectFET™ Power MOSFET
RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
IRF6612PbF
IRF661TRPbF
R
DS(on)
R
DS(on)
V
DSS
V
GS
30V max ±20V max 2.5mΩ@ 10V 3.4mΩ@ 4.5V
Q
g
tot
Q
gd
10nC
Q
gs2
2.9nC
Q
rr
8.1nC
Q
oss
18nC
V
gs(th)
1.8V
30nC
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
MX
MT
DirectFET™ ISOMETRIC
SQ
SX
ST
MQ
MX
Description
The IRF6612PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6612PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/
high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The
IRF6612PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
E
AS
I
AR
10
9
8
7
6
5
4
3
2
1
0
2
Typical RDS(on) (mΩ)
Max.
30
±20
136
24
19
190
37
19
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
ID = 24A
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
ID = 19A
A
mJ
A
T J = 125°C
VDS = 24V
VDS = 15V
T J = 25°C
3
4
5
6
7
8
9
10
10
20
30
40
www.irf.com
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2.
Total Gate Charge vs. Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.20mH, R
G
= 25Ω, I
AS
= 19A.
1
05/29/06

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