High Current
Power MOSFET
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, High dv/dt
Data Sheet
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
Mounting torque
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
IXTQ 40N50Q
V
DSS
= 500 V
= 40 A
I
D25
R
DS(on)
= 0.16
Ω
Maximum Ratings
500
500
±30
±40
40
160
40
50
2.0
5
500
-55 to +150
150
-55 to +150
300
V
V
V
V
A
A
A
mJ
mJ
V/ns
TO-3P (IXTQ)
G
D
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
S
(TAB)
G = Gate
D
= Drain
S = Source TAB = Drain
Features
W
°C
°C
°C
°C
IXYS advanced low Q
g
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
DS (on)
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
1.13/10 Nm/lb.in.
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
500
2.5
4.5
±100
T
J
= 25°C
T
J
= 125°C
25
1
0.16
V
V
nA
µA
mA
Ω
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2004 IXYS All rights reserved
DS99056A(08/04)
IXTQ 40N50Q
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
22
35
4500
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
700
180
17
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2.0
Ω
(External),
20
56
14
130
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
26
58
0.25
0.25
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
TO-3P (IXTQ) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 20 V; I
D
= 0.5 • I
D25
, pulse test
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Test Conditions
V
GS
= 0 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
40
160
1.5
600
A
A
V
ns
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
IXTQ 40N50Q
Fig. 1. Output Characteristics
@ 25 Deg. C
40
35
30
V
G S
= 10V
7V
6V
90
80
70
V
G S
= 10V
Fig. 2. Extended Output Characteristics
@ 25 deg. C
I
D
- Amperes
25
20
1
5
1
0
5
0
0
1
2
5V
I
D
- Amperes
60
50
40
30
20
1
0
0
7V
6V
5V
V
DS
- Volts
3
4
5
6
7
0
3
6
9
1
2
1
5
1
8
21
V
DS
- Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
40
35
30
V
G S
= 10V
7V
6V
Fig. 4. R
DS(on)
Normalized to I
D25
Value vs.
Junction Temperature
2.8
2.5
V
G S
= 10V
R
S (on)
- Normalized
D
2.2
1
.9
1
.6
1
.3
1
0.7
0.4
I
D
= 40A
I
D
= 20A
I
D
- Amperes
25
20
1
5
1
0
5
0
0
3
6
9
1
2
1
5
5V
-50
-25
0
25
50
75
1
00
1
25
1
50
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D25
Value vs. I
D
3.1
2.8
V
G S
= 10V
50
Fig. 6. Drain Current vs. Case
Temperature
R
S (on)
- Normalized
D
2.5
2.2
1
.9
1
.6
1
.3
1
0.7
0
1
0
20
30
40
40
I
D
- Amperes
T
J
= 125
º
C
30
20
1
0
T
J
= 25
º
C
0
50
60
70
80
-50
-25
0
25
50
75
1
00
1
25
1
50
I
D
- Amperes
T
C
- Degrees Centigrade
© 2004 IXYS All rights reserved
IXTQ 40N50Q
Fig. 7. Input Admittance
80
70
60
70
60
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 8. Transconductance
50
40
30
20
1
0
0
3.5
4
4.5
5
5.5
6
6.5
7
T
J
= 120
º
C
25
º
C
-40
º
C
g
f s
- Siemens
I
D
- Amperes
50
40
30
20
1
0
0
0
10
20
30
40
50
60
70
80
V
GS
- Volts
I
D
- Amperes
Fig. 9. Source Current vs. Source-To-Drain
Voltage
1
20
1
00
1
0
Fig. 10. Gate Charge
V
D S
= 250V
I
D
= 20A
I
G
= 10mA
8
I
S
- Amperes
V
G S
- Volts
T
J
= 25
º
C
80
60
40
20
0
0.4
0.6
0.8
1
1
.2
6
T
J
= 125
º
C
4
2
0
0
20
40
60
80
1
00
1
20
1
40
V
SD
- Volts
Q
G
- nanoCoulombs
Fig. 11. Capacitance
1
0000
f = 1M Hz
1
Fig. 12. Maximum Transient Thermal
Resistance
Capacitance - pF
1
000
C
oss
R
(th) J C
- (ºC/W
)
25
30
35
40
C
iss
0.1
C
rss
1
00
0
5
1
0
1
5
0.01
20
1
1
0
1
00
1
000
V
DS
- Volts
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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