MURF10040 datasheet, PDF - EEWORLD Datasheet

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MURF10040: DescriptionSilicon Super Fast Recovery Diode; CategoryDiscrete semiconductor diode; File Size340KB，3 Pages; ManufacturerGeneSiC; Websitehttp://www.genesicsemi.com/

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MURF10040 Overview

Silicon Super Fast Recovery Diode

MURF10040 Parametric

Parameter Name	Attribute value
Maker	GeneSiC
Reach Compliance Code	compliant
application	SUPER FAST RECOVERY
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JEDEC-95 code	TO-244
JESD-30 code	R-PUFM-X2
Maximum non-repetitive peak forward current	1500 A
Number of components	2
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	50 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	25 µA
Maximum reverse recovery time	0.09 µs
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER

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MURF10040 thru MURF10060R

Silicon Super Fast

Recovery Diode

Features

• High Surge Capability

• Types from 400 V to 600 V V

RRM

• Not ESD Sensitive

TO-244 Package

V

RRM

= 400 V - 600 V

I

F(AV)

= 100 A

Maximum ratings, at T

j

= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Parameter

Repetitive peak reverse voltage

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

Symbol

V

RRM

V

RMS

V

DC

T

j

T

stg

Conditions

MURF10040(R)

400

280

400

-55 to 150

MURF10060(R)

600

420

600

-55 to 150

Unit

V

°C

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Average forward current (per pkg)

Peak forward surge current (per leg)

Maximum instantaneous forward

voltage (per leg)

Maximum reverse current at rated DC

blocking voltage (per leg)

Maximum reverse recovery time (per

leg)

Symbol

I

F(AV)

I

FSM

V

F

I

R

T

rr

Conditions

T

C

= 140 °C

t

p

= 8.3 ms, half sine

I

FM

= 50 A, T

j

= 25 °C

T

j

= 25 °C

T

j

= 125 °C

I

F

=0.5 A, I

R

=1.0 A,

I

RR

= 0.25 A

MURF10040(R)

100

1500

1.3

25

3

90

MURF10060(R)

100

1500

1.70

25

3

110

Unit

A

V

μA

mA

nS

Thermal characteristics

Maximum thermal resistance, junction -

case (per leg)

R

ΘJC

1.00

°C/W

www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/

1

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