Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD2296
DESCRIPTION
・With
TO-3PN package
・High
breakdown voltage
APPLICATIONS
・For
color TV horizontal deflection
output applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
6
5
6
50
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
EBO
V
CEsat
V
BEsat
I
CES
h
FE
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
DC current gain
CONDITIONS
I
C
=10mA ;R
BE
=∞
I
E
=10mA ;I
C
=0
I
C
=4.5A; I
B
=1.2A
I
C
=4.5A; I
B
=1.2A
V
CE
=1500V ;R
BE
=0
I
C
=1A ; V
CE
=5V
8
MIN
800
6
TYP.
2SD2296
MAX
UNIT
V
V
5.0
1.5
0.5
30
V
V
mA
Switching times
t
f
Fall time
I
C
=4.0A
I
B1
=0.8A;I
B2
≈-1.5A
0.8
μs
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
PACKAGE OUTLINE
2SD2296
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
JMnic
京公网安备 11010802033920号
EEWORLD
