1N4592 datasheet, PDF - EEWORLD Datasheet

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1N4592: Description150 A, SILICON, RECTIFIER DIODE, DO-8; CategoryDiscrete semiconductor diode; File Size735KB，3 Pages; ManufacturerGeneSiC; Websitehttp://www.genesicsemi.com/

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1N4592 Overview

150 A, SILICON, RECTIFIER DIODE, DO-8

1N4592 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
package instruction	O-MUPM-H1
Reach Compliance Code	compliant
Is Samacsys	N
application	GENERAL PURPOSE
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V
JEDEC-95 code	DO-205AA
JESD-30 code	O-MUPM-H1
Maximum non-repetitive peak forward current	3000 A
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	150 A
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	6500 µA
surface mount	NO
Terminal form	HIGH CURRENT CABLE
Terminal location	UPPER
Base Number Matches	1

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1N4588(R) thru 1N4593(R)

Silicon Standard

Recovery Diode

Features

• High Surge Capability

• Types from 200 V to 800 V V

RRM

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

2. Reverse polarity (R): Stud is anode.

3. Stud is base.

DO-8 Package

RRM

= 200 V - 800 V

=150 A

Maximum ratings, at T

= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Parameter

Repetitive p

peak reverse voltage

DC blocking voltage

Continuous forward current

Surge non-repetitive forward

current, Half Sine Wave

t for fusing

Operating temperature

Storage temperature

Symbol

RRM

F,SM

stg

≤ 110 °C

= 25 °C, t

= 8.3 ms

60 Hz Half wave

Conditions

1N4588(R)

200

150

3000

37200

-55 to 150

1N4590(R)

400

150

3000

37200

-55 to 150

1N4592(R)

600

150

3000

37200

-55 to 150

1N4593(R)

800

150

3000

37200

-55 to 150

Unit

sec

°C

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Diode forward voltage

Reverse current

Symbol

Conditions

= 150 A, T

= 110 °C

= V

RRM

, T

= 110 °C

1N4588(R)

1.5

9.5

1N4590(R)

1.5

1N4592(R)

1.5

6.5

1N4593(R)

1.5

5.5

Unit

Thermal characteristics

Thermal resistance, junction -

case

thJC

0.35

°C/W

Feb 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

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