JMnic
Product Specification
Silicon NPN Power Transistors
2SC4303
DESCRIPTION
・With
TO-3PML package
・High
voltage switchihg transistor
APPLICATIONS
・Switching
Regulator,
・Lighting
Inverter and general purpose
PINNING
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-3PML) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1400
800
7
6
80
150
-55~150
UNIT
V
V
V
A
W
℃
℃
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4303
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=10mA; I
B
=0
I
E
=1mA; I
C
=0
I
C
=2.5A;I
B
=0.5A
I
C
=2.5A;I
B
=0.5A
V
CB
=1200V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=2.5A ; V
CE
=4V
I
E
=0.5A ; V
CE
=12V
6
4
MHz
MIN
800
7
1.0
1.5
100
100
TYP.
MAX
UNIT
V
V
V
V
μA
μA
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4303
Fig.2 Outline dimensions
3
京公网安备 11010802033920号
EEWORLD
