Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC4688
DESCRIPTION
・With
TO-3PFM package
・Complement
to type 2SA1803
APPLICATIONS
・Power
amplifier applications
・Recommend
for 40W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PFM) and symbol
DESCRIPTION
・
Maximum absolute ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collectorl power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
80
80
5
6
12
0.6
55
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=50mA; I
B
=0
I
C
=5A;I
B
=0.5 A
I
C
=3A ; V
CE
=5V
V
CB
=80V I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
I
E
=0; V
CB
=10V;f=1MHz
55
35
30
105
MIN
80
TYP.
2SC4688
MAX
UNIT
V
2.0
1.5
5
5
160
V
V
μA
μA
MHz
pF
h
FE
classifications
R
55-110
O
80-160
JMnic
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