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2SB795_2014

Description
Silicon PNP Power Transistors
File Size46KB,3 Pages
ManufacturerJinmei
Websitehttp://www.jmnic.com/
Download Datasheet View All

2SB795_2014 Overview

Silicon PNP Power Transistors

JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-126 package
・DARLINGTON
・High
DC current gain
・Low
collector saturation voltage
・Complement
to type 2SD985 2SD986
APPLICATIONS
・For
use in operating from IC without
predriver ,such as hammer driver
PINNING(See Fig.2)
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
2SB794 2SB795
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SB794
V
CBO
Collector-base voltage
2SB795
2SB794
V
CEO
Collector-emitter voltage
2SB795
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current (DC)
Collector current-peak
T
a
=25℃
P
D
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
10
150
-55~150
Open collector
Open base
-80
-8
-1.5
-3.0
1.0
W
V
A
A
Open emitter
-80
-60
V
CONDITIONS
VALUE
-60
V
UNIT
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