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MBR60100CT

Description
30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size239KB,4 Pages
ManufacturerSMC
Websitehttp://www.smc-diodes.com/
Download Datasheet View All

MBR60100CT Overview

30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

MBR60100CT
Technical Data
Data Sheet N0777, Rev. B
MBR60100CT SCHOTTKY RECTIFIER
Features
150
C
T
J
operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced
mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
LKLLKJHYJ,
TO-220AB
Circuit Diagram
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current(Per Leg)
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @Tc=135°C,
rectangular wave form
8.3ms, Half Sine pulse
Max.
100
30(Per Leg)
60(Per Device)
280
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop(Per Leg)*
Reverse Current(Per Leg)*
Symbol
V
F1
V
F2
I
R1
I
R2
@ 30A, Pulse, T
J
= 25C
@ 30A, Pulse, T
J
= 125C
@V
R
= rated V
R
T
J
= 25C
@V
R
= rated V
R
T
J
= 125C
@V
R
= 5V, T
C
= 25℃, f
SIG
= 1MHz
-
Condition
0.85
0.76
0.01
8
400
-
Typ.
0.90
0.81
1.0
20
Max.
Units
V
V
mA
mA
pF
V/s
Junction Capacitance(Per Leg)
C
T
Voltage Rate of Change
* Pulse width < 300 µs, duty cycle < 2%
dv/dt
800
10,000
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http://www.smc-diodes.com - sales@ smc-diodes.com
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