IRF6645PbF
IRF6645TRPbF
RoHS Compliant, Halogen-Free
l
Lead-Free (Qualified up to 260°C Reflow)
l
Application Specific MOSFETs
l
Ideal for High Performance Isolated Converter
Primary Switch Socket
l
Optimized for Synchronous Rectification
l
Low Conduction Losses
l
High Cdv/dt Immunity
l
Low Profile (<0.7mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount Techniques
l
DirectFET Power MOSFET
Typical values (unless otherwise specified)
V
DSS
Q
g
tot
V
GS
Q
gd
4.8nC
R
DS(on)
28mΩ@ 10V
100V max ±20V max
V
gs(th)
4.0V
14nC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH
SJ
SP
MZ
MN
SJ
DirectFET ISOMETRIC
Description
The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note
AN-1035
is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6645PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
80
Typical R DS (on) (mΩ)
Max.
100
±20
5.7
4.5
25
45
29
3.4
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Avalanche Current
Continuous Drain Current, V
GS
@ 10V
g
e
@ 10V
e
@ 10V
f
h
12
10
8
6
4
2
0
0
4
ID= 3.4A
A
Single Pulse Avalanche Energy
Ãg
mJ
A
70
60
50
40
30
20
4
ID = 3.4A
VDS= 80V
VDS= 50V
TJ = 125°C
TJ = 25°C
6
8
10
12
14
VGS, Gate-to-Source Voltage (V)
16
8
12
16
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 5.0mH, R
G
= 25Ω, I
AS
= 3.4A.
1
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2012 International Rectifier
February 26, 2013
IRF6645/TRPbF
Electrical Characteristic @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Min.
100
–––
–––
3.0
–––
–––
–––
–––
–––
7.4
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.12
28
–––
-12
–––
–––
–––
–––
–––
14
3.1
0.8
4.8
5.3
5.6
7.2
1.0
9.2
5.0
18
5.1
890
180
40
870
100
Max.
–––
–––
35
4.9
–––
20
250
100
-100
–––
20
–––
–––
7.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
V/°C
mΩ
V
mV/°C
μA
nA
S
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.7A
V
DS
= V
GS
, I
D
= 50μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 3.4A
V
DS
= 50V
i
nC
V
GS
= 10V
I
D
= 3.4A
See Fig. 15
nC
Ω
V
DS
= 16V, V
GS
= 0V
V
DD
= 50V, V
GS
= 10V
I
D
= 3.4A
–––
–––
–––
–––
–––
–––
–––
–––
–––
Ãi
ns
R
G
=6.2Ω
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
V
GS
= 0V, V
DS
= 80V, f=1.0MHz
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
31
40
Max.
25
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
S
D
Ãg
45
1.3
47
60
V
ns
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
T
J
= 25°C, I
S
= 3.4A, V
GS
= 0V
di/dt = 100A/μs
i
T
J
= 25°C, I
F
= 3.4A, V
DD
= 50V
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
2%.
2
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©
2012 International Rectifier
February 26, 2013
IRF6645/TRPbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
e
Power Dissipation
e
Power Dissipation
f
Power Dissipation
Parameter
Max.
2.2
1.4
42
270
-40 to + 150
Units
W
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
100
el
Junction-to-Ambient
jl
Junction-to-Ambient
kl
Junction-to-Case
fl
Junction-to-Ambient
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
58
–––
–––
3.0
–––
Units
°C/W
Junction-to-PCB Mounted
D = 0.50
Thermal Response ( ZthJA )
10
0.20
0.10
0.05
1
0.02
0.01
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
R
5
R
5
τ
A
C
τ
τ
5
Ri (°C/W)
0.6677
C
τi
(sec)
0.000066
0.000896
0.004386
0.686180
32
1.0463
1.5612
29.2822
25.4550
τ
2
τ
3
τ
4
τ
5
0.1
Ci=
τi/Ri
Ci=
τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthja + Ta
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Mounted on minimum footprint full size board with metalized
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Used double sided cooling, mounting pad with large heatsink.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
February 26, 2013
3
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©
2012 International Rectifier
IRF6645/TRPbF
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
10
6.0V
1
6.0V
≤60μs
PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
1
0.1
1
≤60μs
PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
100
VDS = 10V
Fig 5.
Typical Output Characteristics
2.0
ID = 5.7A
VGS = 10V
ID, Drain-to-Source Current
(Α)
10
Typical RDS(on) (Normalized)
7.0
8.0
≤60μs
PULSE WIDTH
TJ = 150°C
TJ = 25°C
TJ = -40°C
1.5
1
1.0
0.1
4.0
5.0
6.0
VGS, Gate-to-Source Voltage (V)
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Fig 7.
Normalized On-Resistance vs. Temperature
60
VGS = 7.0V
VGS = 8.0V
TA= 25°C
C, Capacitance(pF)
(mΩ)
Coss = Cds + Cgd
50
VGS = 10V
VGS = 15V
1000
Coss
100
DS(on)
Typical R
Ciss
40
Crss
30
10
1
10
VDS, Drain-to-Source Voltage (V)
100
20
0
10
20
30
40
50
ID, Drain Current (A)
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
4
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Fig 9.
Typical On-Resistance vs. Drain Current
February 26, 2013
IRF6645/TRPbF
100.0
ID, Drain-to-Source Current (A)
1000
ISD, Reverse Drain Current (A)
TJ = 150°C
TJ = 25°C
10.0
TJ = -40°C
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100μsec
10
1.0
1msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
1.0
VGS = 0V
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD , Source-to-Drain Voltage (V)
0.1
10msec
10.0
100.0
1000.0
VDS , Drain-toSource Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
6.0
Fig11.
Maximum Safe Operating Area
6.0
5.0
VGS(th) Gate threshold Voltage (V)
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
ID , Drain Current (A)
4.0
3.0
ID = 1.0A
ID = 1.0mA
ID = 50μA
2.0
ID = 250μA
1.0
0.0
25
50
75
100
125
150
-75
-50
-25
0
25
50
75
100
125
150
TJ , Ambient Temperature (°C)
TJ , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Ambient Temperature
EAS, Single Pulse Avalanche Energy (mJ)
120
Fig 13.
Typical Threshold Voltage vs.
Junction Temperature
I D
TOP
1.5A
2.4A
BOTTOM
3.4A
100
80
60
40
20
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
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February 26, 2013
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