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30CPQ080

Description
30 A, 80 V, SILICON, RECTIFIER DIODE, TO-247AC
Categorysemiconductor    Discrete semiconductor   
File Size335KB,4 Pages
ManufacturerSMC
Websitehttp://www.smc-diodes.com/
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30CPQ080 Overview

30 A, 80 V, SILICON, RECTIFIER DIODE, TO-247AC

30CPQ080
30CPQ100
Technical Data
Data Sheet N0679, Rev. A
30CPQ080/30CPQ100 SCHOTTKY RECTIFIER
Features
175
C
T
J
operation
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
TO-247AD
Circuit Diagram
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Center tap configuration
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current(Per Leg)
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @Tc=140°C,
rectangular wave form
8.3ms, Half Sine pulse, T
C
= 25
C
Max.
80(30CPQ080)
100(30CPQ100)
15(Per Leg)
30(Per Device)
280
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(Per Leg)*
Symbol
V
F1
V
F2
Condition
@ 15A, Pulse, T
J
= 25
C
@ 30A, Pulse, T
J
= 25
C
@ 15A, Pulse, T
J
= 125
C
@ 30A, Pulse, T
J
= 125
C
@V
R
= rated V
R
T
J
= 25
C
@V
R
= rated V
R
T
J
= 125
C
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz
-
Typ.
0.76
-
0.60
-
0.0003
0.2
400
-
Max.
0.86
1.05
0.67
0.81
0.55
7.0
500
10,000
Units
V
V
mA
mA
pF
V/s
Reverse Current
(Per Leg)*
Junction Capacitance(Per Leg)
Voltage Rate of Change
* Pulse width < 300 µs, duty cycle < 2%
I
R1
I
R2
C
T
dv/dt
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

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