1N4007 datasheet, PDF - EEWORLD Datasheet

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1N4007: Description1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41; Categorysemiconductor Discrete semiconductor; File Size157KB，4 Pages; ManufacturerSMC; Websitehttp://www.smc-diodes.com/

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1N4007 Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

1N4007 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	PLASTIC PACKAGE-2
state	ACTIVE
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
Terminal location	AXIAL
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	Signal diode
Maximum repetitive peak reverse voltage	1000 V
Maximum average forward current	1 A

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SANGDEST

MICROELECTRONICS

Technical Data

Data Sheet N0543, Rev. -

1N4001-1N4007

1.0 SILICON RECTIFIER

Green Products

Marking Diagram:

Where XXXXX is YYWWL

1N4001

SSG

= Part Name

= SSG

= Year

= Week

= Lot Number

Cautions：

Molding resin

Epoxy resin UL:94V-0

Ordering Information

Device

1N4001-1N4007

Package

DO-41

(Pb-Free)

Shipping

5000pcs / reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specification.

•

Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113

(86) 25-87123907

•

FAX (86) 25-87123900

•

World Wide Web Site - http://www.sangdest.com.cn

•

E-Mail Address - sales@ sangdest.com.cn

•

SANGDEST

MICROELECTRONICS

Technical Data

Data Sheet N0543, Rev. -

1N4001-1N4007

1.0 SILICON RECTIFIER

Green Products

DISCLAIMER:

1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product

characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales

department for the latest version of the datasheet(s).

2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,

medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by

means of users’ fail-safe precautions or other arrangement .

3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or

any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd

assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,

products or circuits described in the datasheets.

4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any

secondary damage resulting from use at a value exceeding the absolute maximum rating.

5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics

(Nanjing) Co., Ltd.

6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC

- Sangdest Microelectronics (Nanjing) Co., Ltd.

7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will

hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third

party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and

regulations..

•

Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113

(86) 25-87123907

•

FAX (86) 25-87123900

•

World Wide Web Site - http://www.sangdest.com.cn

•

E-Mail Address - sales@ sangdest.com.cn

•

1N4007 Related Products

	1N4007	1N4001	1N4002	1N4004	1N4005	1N4003	1N4006
Description	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE, DO-41	1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
Number of terminals	2	2	2	2	2	2	2
Number of components	1	1	1	1	1	1	1
state	ACTIVE	ACTIVE	TRANSFERRED	ACTIVE	ACTIVE	TRANSFERRED	ACTIVE
packaging shape	round	round	round	round	round	round	ROUND
Package Size	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Terminal form	Wire	Wire	Wire	Wire	Wire	Wire	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Packaging Materials	Plastic/Epoxy	UNSPECIFIED	Plastic/Epoxy	UNSPECIFIED	Plastic/Epoxy	Glass	PLASTIC/EPOXY
structure	single	single	single	single	single	single	SINGLE
Shell connection	isolation	isolation	isolation	isolation	isolation	isolation	ISOLATED
Diode component materials	silicon	silicon	silicon	silicon	silicon	silicon	SILICON
Diode type	Signal diode	Signal diode	Signal diode	Signal diode	Signal diode	Signal diode	SIGNAL DIODE
Maximum average forward current	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Processing package description	PLASTIC PACKAGE-2	MINIATURE PACKAGE-2	-	CASE R-1, 2 PIN	PLASTIC PACKAGE-2	ALF-2, DO-41, 2 PIN	ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN
Maximum repetitive peak reverse voltage	1000 V	-	100 V	400 V	600 V	-	800 V
terminal coating	-	NOT SPECIFIED	tin lead	-	NOT SPECIFIED	-	NOT SPECIFIED

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