DCR5240H52
Phase Control Thyristor
Preliminary Information
DS6160- 1 September 2014 (LN31988)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dV/dt*
dI/dt
5200V
5240A
77800A
2000V/µs
200A/µs
APPLICATIONS
High Power Drives
High Voltage Power Supplies
Static Switches
*
Higher dV/dt selections available
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
RRM
V
5200
5000
4800
Conditions
DCR5240H52*
DCR5240H50
DCR5240H48
T
vj
= -40°C to 125°C,
I
DRM
= I
RRM
= 600mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
o
o
*5000V @ -40 C, 5200V @ 0 C
Outline type code: H
(See Package Details for further information)
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR5240H52
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
Fig. 1 Package outline
1/10
www.dynexsemi.com
DCR5240H52
SEMICONDUCTOR
CURRENT RATINGS
T
case
= 60°C unless stated otherwise
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Parameter
Test Conditions
Max.
Units
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
5240
8230
7290
A
A
A
SURGE RATINGS
Symbol
I
TSM
It
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
2
Test Conditions
10ms half sine, T
case
= 125°C
V
R
= 0
Max.
77.80
30.27
Units
kA
MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 135.0kN
(with mounting compound)
T
vj
T
stg
F
m
Virtual junction temperature
Storage temperature range
Clamping force
Blocking V
DRM
/ V
RRM
Double side
Single side
Min.
-
-
-
-
-
-
-55
120
Max.
0.004255
0.008
0.0093
0.0009
0.0018
125
125
155
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
kN
2/10
www.dynexsemi.com
DCR5240H52
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125°C
To 67% V
DRM
, T
j
= 125°C, gate open
From 67% V
DRM
to 2x I
T(AV)
Gate source 30V, 10,
t
r
< 0.5µs, T
j
= 125°C
Repetitive 50Hz
Non-repetitive
Min.
-
-
-
-
Max.
600
2000
200
500
Units
mA
V/µs
A/µs
A/µs
V
T(TO)
Threshold voltage – Low level
Threshold voltage – High level
500 to 4000A at T
case
= 125°C
4000 to 8000A at T
case
= 125°C
500A to 4000A at T
case
= 125°C
4000A to 8000A at T
case
= 125°C
V
D
= 67% V
DRM
, gate source 30V, 10
t
r
= 0.5µs, T
j
= 25°C
-
-
-
-
-
0.975
1.222
0.175
0.118
3
V
V
m
m
µs
r
T
On-state slope resistance – Low level
On-state slope resistance – High level
t
gd
Delay time
t
q
Turn-off time
I
T
= 3000A, T
j
= 125°C,
V
R
= 200V, dI/dt = 1A/µs,
dV
DR
/dt = 20V/µs linear
500
µs
Q
S
Stored charge
I
T
= 3000A, T
j
= 125°C, dI/dt – 1A/µs,
V
Rpeak
~3100V, V
R
~ 2100V
2230
4290
µC
I
RR
Reverse recovery current
38
52
A
I
L
Latching current
T
j
= 25°C, V
D
= 5V
-
3
A
I
H
Holding current
T
j
= 25°C, R
G-K
=
,
I
TM
= 500A, I
T
= 5A
-
300
mA
3/10
www.dynexsemi.com
DCR5240H52
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
V
GD
I
GT
I
GD
Parameter
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Gate non-trigger current
Test Conditions
V
DRM
= 5V, T
case
= 25°C
At 50% V
DRM,
T
case
= 125°C
V
DRM
= 5V, T
case
= 25°C
At 50% V
DRM,
T
case
= 125°C
Max.
1.5
0.4
350
10
Units
V
V
mA
mA
CURVES
12000
10000
Instantaneous on state current , I
T
- (A)
8000
6000
4000
min 25°C
max 25°C
2000
min 125°C
max 125°C
0
0.50
1.00
1.50
2.00
2.50
Instantaneous on state voltage, V
T
- (V)
Fig.2 Maximum & minimum on-state characteristics
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.I
T
Where
A = 2.0022
B = -0.2464
C = -0.0000027
D = 0.02699
these values are valid for T
j
= 125°C for I
T
500A to 8000A
4/10
www.dynexsemi.com
DCR5240H52
SEMICONDUCTOR
15000
14000
13000
12000
11000
130
120
10000
9000
8000
7000
180
Maximum permissible case temperature - (ºC)
110
100
Mean Power Dissipation (W)
90
80
70
60
90
180
120
6000
5000
120
90
60
30
50
40
30
20
10
0
0
60
30
4000
3000
2000
1000
0
0
2000
4000
6000
2000
4000
6000
8000
Mean on-state current, It(av) - (A)
Mean on-state current, It
(av)
- (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
15000
130
120
110
100
180
120
14000
13000
12000
11000
90
60
Maximum permissable Heatsink Temp, ºC
90
80
70
30
10000
Mean Power Dissipation - (W)
9000
8000
7000
d.c.
180
60
50
40
6000
5000
4000
3000
120
90
60
30
30
20
10
2000
1000
0
0
0
2000
4000
6000
(av)
8000
0
2000
4000
6000
8000
Mean on-state current. It
- (A)
Mean on-state current, It(av) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
Fig.6 On-state power dissipation – rectangular wave
5/10
www.dynexsemi.com
京公网安备 11010802033920号
EEWORLD
